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DMA204030R PDF预览

DMA204030R

更新时间: 2024-11-06 14:33:19
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
6页 1104K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN

DMA204030R 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:7.83最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):210JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

DMA204030R 数据手册

 浏览型号DMA204030R的Datasheet PDF文件第2页浏览型号DMA204030R的Datasheet PDF文件第3页浏览型号DMA204030R的Datasheet PDF文件第4页浏览型号DMA204030R的Datasheet PDF文件第5页浏览型号DMA204030R的Datasheet PDF文件第6页 
DMA20403  
Silicon PNP epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
For general amplification  
Features  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: B9  
Basic Part Number  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Collector (Tr2)  
Panasonic  
4: Emitter (Tr2)  
DSA2001 + DSA2002 (Individual)  
5: Base (Tr2)  
6: Collector (Tr1)  
Mini6-G4-B  
SC-74  
Packaging  
DMA204030R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
JEITA  
Code  
SOT-457  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Tr1 Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–60  
Unit  
V
(C1) (B2) (E2)  
6
5
4
–50  
V
Tr1  
Tr2  
–7  
V
–100  
–200  
–60  
mA  
mA  
V
1
2
3
(E1) (B1) (C2)  
Peak collector current  
ICP  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Tr2 Emitter-base voltage (Collector open)  
Collector current  
VCBO  
VCEO  
VEBO  
IC  
–50  
V
–5  
V
–500  
–1  
mA  
A
Peak collector current  
ICP  
Total power dissipation  
PT  
300  
mW  
°C  
°C  
°C  
Junction temperature  
Overall  
Tj  
150  
Operating ambient temperature  
Topr  
–40 to +85  
–55 to +150  
Storage temperature  
T
stg  
Publication date: December 2013  
Ver. CED  
1

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