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DMA20402 PDF预览

DMA20402

更新时间: 2024-11-18 09:54:03
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
4页 513K
描述
Silicon PNP epitaxial planar type

DMA20402 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.76Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzBase Number Matches:1

DMA20402 数据手册

 浏览型号DMA20402的Datasheet PDF文件第2页浏览型号DMA20402的Datasheet PDF文件第3页浏览型号DMA20402的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMA20402  
Silicon PNP epitaxial planar type  
For general amplication  
Features  
Package  
High forward current transfer ratio hFE with excellent linearity  
Code  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Mini6-G4-B  
Pin Name  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Collector (Tr2)  
4: Emitter (Tr2)  
5: Base (Tr2)  
Basic Part Number  
Dual DSA2002 (Individual)  
6: Collector (Tr1)  
Marking Symbol: B5  
Internal Connection  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
(C1) (B2) (E2)  
Absolute Maximum Ratings T = 25°C  
a
6
5
4
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–60  
Unit  
V
Tr1  
Tr2  
–50  
V
–5  
V
1
2
3
(E1) (B1) (C2)  
–500  
–1  
mA  
A
Peak collector current  
ICP  
Total power dissipation  
PT  
300  
mW  
°C  
°C  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
Electrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
–60  
–50  
–5  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
VCBO IC = –10 µA, IE = 0  
VCEO IC = –2 mA, IB = 0  
VEBO IE = –10 µA, IC = 0  
V
V
ICBO  
hFE1  
hFE2  
VCB = –20 V, IE = 0  
– 0.1  
340  
µA  
VCE = –10 V, IC = –150 mA  
VCE = –10 V, IC = –500 mA  
120  
40  
Forward current transfer ratio *  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
Transition frequency  
VCE(sat) IC = –300 mA, IB = –30 mA  
VBE(sat) IC = –300 mA, IB = –30 mA  
– 0.2  
– 0.9  
130  
– 0.6  
–1.5  
V
V
fT  
VCE = –10 V, IC = –50 mA  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
7.3  
15  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Pulse measurement  
*
Publication date: April 2010  
ZJJ00534CED  
1

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