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DHG30I1200HA PDF预览

DHG30I1200HA

更新时间: 2024-11-05 12:52:19
品牌 Logo 应用领域
IXYS 二极管快恢复二极管
页数 文件大小 规格书
4页 103K
描述
Sonic Fast Recovery Diode

DHG30I1200HA 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-247包装说明:R-PSFM-T2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:8.32其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
应用:FAST SOFT RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.26 V
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:180 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1200 V最大反向恢复时间:0.075 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DHG30I1200HA 数据手册

 浏览型号DHG30I1200HA的Datasheet PDF文件第2页浏览型号DHG30I1200HA的Datasheet PDF文件第3页浏览型号DHG30I1200HA的Datasheet PDF文件第4页 
DHG 30 I 1200 HA  
VRRM = 1200 V  
Sonic Fast Recovery Diode  
IFAV  
trr  
=
=
A
30  
200 ns  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Single Diode  
Part number  
DHG 30 I 1200 HA  
3
1
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Housing: TO-247  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
rIndustry standard outline  
rEpoxy meets UL 94V-0  
rRoHS compliant  
Very soft recovery behaviour  
Avalanche voltage rated for reliable  
operation  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
R a t i n g s  
Conditions  
Symbol  
VRRM  
IR  
Definition  
min. typ. max. Unit  
TVJ  
1200  
50  
V
max. repetitive reverse voltage  
reverse current  
=
=
25°C  
25°C  
µA  
VR = 1200V  
VR = 1200V  
TVJ  
TVJ = 125°C  
TVJ 25°C  
0.5 mA  
forward voltage  
VF  
IF  
IF  
IF  
IF  
=
=
=
=
30A  
60A  
30A  
60A  
=
1.95 2.26  
V
V
V
V
A
V
3.00  
1.95 2.27  
3.20  
T
VJ = 125°C  
IFAV  
VF0  
rF  
TC  
=
90°C  
30  
average forward current  
threshold voltage  
rectangular  
d = 0.5  
TVJ = 150°C  
1.25  
for power loss calculation only  
slope resistance  
30 m  
RthJC  
TVJ  
Ptot  
IFSM  
IRM  
0.70 K/W  
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
-55  
150  
180  
200  
°C  
W
A
TC  
=
=
25°C  
45°C  
max. forward surge current  
max. reverse recovery current  
TVJ  
t = 10 ms (50 Hz), sine  
23  
30  
A
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
A
IF = 30 A; VR = 600V  
-diF/dt = 600 A/µs  
reverse recovery time  
junction capacitance  
trr  
200  
350  
11  
ns  
ns  
pF  
CJ  
VR = 600 V; f = 1 MHz  
TVJ = 25°C  
IXYS reserves the right to change limits, conditions and dimensions.  
20110510a  
Data according to IEC 60747and per diode unless otherwise specified  
2011 IXYS all rights reserved  
©

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