5秒后页面跳转
DHG50X1200NA PDF预览

DHG50X1200NA

更新时间: 2024-01-08 09:12:19
品牌 Logo 应用领域
IXYS 软恢复二极管快速软恢复二极管局域网测试
页数 文件大小 规格书
4页 114K
描述
Rectifier Diode, 1 Phase, 2 Element, 25A, 1200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4

DHG50X1200NA 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, MINIBLOC-4Reach Compliance Code:compliant
风险等级:5.76其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, UL RECOGNIZED
应用:FAST SOFT RECOVERY外壳连接:ISOLATED
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2 V
JESD-30 代码:R-PUFM-X4最大非重复峰值正向电流:200 A
元件数量:2相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:100 W认证状态:Not Qualified
最大重复峰值反向电压:1200 V最大反向电流:2000 µA
最大反向恢复时间:0.2 µs反向测试电压:1200 V
子类别:Other Diodes表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DHG50X1200NA 数据手册

 浏览型号DHG50X1200NA的Datasheet PDF文件第2页浏览型号DHG50X1200NA的Datasheet PDF文件第3页浏览型号DHG50X1200NA的Datasheet PDF文件第4页 
DHG 50 X 1200 NA  
preliminary  
VRRM = 1200 V  
Sonic Fast Recovery Diode  
IFAV = 2x  
A
25  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Parallel legs  
trr  
=
200 ns  
Part number  
DHG 50 X 1200 NA  
Backside: Isolated  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Housing: SOT-227B (minibloc)  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
Very soft recovery behaviour  
Avalanche voltage rated for reliable  
operation  
rIndustry standard outline  
rCu base plate internal DCB isolated  
rIsolation Voltage 3000 V  
rEpoxy meets UL 94V-0  
rRoHS compliant  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
R a t i n g s  
Conditions  
Symbol  
VRRM  
IR  
Definition  
min. typ. max. Unit  
TVJ  
1200  
30  
V
max. repetitive reverse voltage  
reverse current  
=
=
25°C  
25°C  
µA  
VR = 1200V  
VR = 1200V  
TVJ  
TVJ = 125°C  
TVJ 25°C  
0.5 mA  
forward voltage  
VF  
IF  
IF  
IF  
IF  
=
=
=
=
25A  
50A  
25A  
50A  
=
2.11  
V
V
V
V
A
V
2.74  
2.09  
2.88  
25  
T
VJ = 125°C  
IFAV  
VF0  
rF  
TC  
= 65°C  
average forward current  
threshold voltage  
rectangular  
d = 0.5  
TVJ = 150°C  
1.23  
for power loss calculation only  
slope resistance  
30 m  
RthJC  
TVJ  
Ptot  
IFSM  
IRM  
1.20 K/W  
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
-40  
150  
100  
200  
°C  
W
A
TC  
=
=
25°C  
45°C  
max. forward surge current  
max. reverse recovery current  
TVJ  
t = 10 ms (50 Hz), sine  
23  
30  
A
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
A
IF = 30 A; VR = 600V  
-diF/dt = 600 A/µs  
reverse recovery time  
junction capacitance  
trr  
200  
350  
11  
ns  
ns  
pF  
CJ  
VR = 600 V; f = 1 MHz  
TVJ = 25°C  
IXYS reserves the right to change limits, conditions and dimensions.  
20110526b  
Data according to IEC 60747and per diode unless otherwise specified  
2011 IXYS all rights reserved  
©

与DHG50X1200NA相关器件

型号 品牌 获取价格 描述 数据表
DHG55I3300FE LITTELFUSE

获取价格

SONIC系列提供改进的反向恢复特性,具有硬关断能力,击穿电压高达1800V。
DHG5I600PA LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, P
DHG5I600PA IXYS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, P
DHG5I600PM IXYS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, TO-220AC, TO-220FPAC, 3 PIN
DHG5I600PM LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, TO-220AC, TO-220FPAC, 3 PIN
DHG60C600HB LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 2 Element, 30A, 600V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT,
DHG60C600HB IXYS

获取价格

Rectifier Diode, 1 Phase, 2 Element, 30A, 600V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT,
DHG60I1200HA LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 1 Element, 60A, 1200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC,
DHG60I1200HA IXYS

获取价格

Rectifier Diode, 1 Phase, 1 Element, 60A, 1200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC,
DHG60I600HA LITTELFUSE

获取价格

SONIC系列提供改进的反向恢复特性,具有硬关断能力,击穿电压高达1800V。