Datasheet > DHG55I3300FE

DHG55I3300FE

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	168K
描述
SONIC系列提供改进的反向恢复特性，具有硬关断能力，击穿电压高达1800V。

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数据手册

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DHG55I3300FE 数据手册

DHG55I3300FE

V_RRM

I_F80

t_rr

3300V

50A

Sonic Fast Recovery Diode

1650ns

High Performance Fast Recovery Diode

Low Loss and Soft Recovery

Single Diode

Part number

DHG55I3300FE

Backside: isolated

see important note page 3

i4-Pac

Features / Advantages:

Applications:

Package:

● Planar passivated chips

● Antiparallel diode for high frequency

switching devices

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Isolation Voltage:

● Industry convenient outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Soldering pins for PCB mounting

● Backside: DCB ceramic

● Reduced weight

4200

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable

operation

● Uninterruptible power supplies (UPS)

● Advanced power cycling

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

www.littelfuse.com/disclaimer-electronics.

and may not be used in, all applications. Read complete Disclaimer Notice at

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20200213b

12 3 4 5 6 7

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