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DHG60I1200HA PDF预览

DHG60I1200HA

更新时间: 2024-11-05 21:17:51
品牌 Logo 应用领域
力特 - LITTELFUSE 软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
4页 102K
描述
Rectifier Diode, 1 Phase, 1 Element, 60A, 1200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, TO-247AD, 2 PIN

DHG60I1200HA 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, TO-247AD, 2 PINReach Compliance Code:compliant
风险等级:5.72其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
应用:FAST SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.22 V
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:430 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:60 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.075 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Pure Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DHG60I1200HA 数据手册

 浏览型号DHG60I1200HA的Datasheet PDF文件第2页浏览型号DHG60I1200HA的Datasheet PDF文件第3页浏览型号DHG60I1200HA的Datasheet PDF文件第4页 
DHG 60 I 1200 HA  
preliminary  
VRRM = 1200 V  
Sonic Fast Recovery Diode  
IFAV  
trr  
=
=
A
60  
200 ns  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Single Diode  
Part number  
DHG 60 I 1200 HA  
3
1
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Housing: TO-247  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
rIndustry standard outline  
rEpoxy meets UL 94V-0  
rRoHS compliant  
Very soft recovery behaviour  
Avalanche voltage rated for reliable  
operation  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
R a t i n g s  
Conditions  
Symbol  
VRRM  
IR  
Definition  
min. typ. max. Unit  
TVJ  
1200  
100  
V
max. repetitive reverse voltage  
reverse current  
=
=
25°C  
25°C  
µA  
VR = 1200V  
VR = 1200V  
TVJ  
TVJ = 125°C  
TVJ 25°C  
1.2 mA  
forward voltage  
VF  
IF  
IF  
IF  
IF  
=
=
=
=
60A  
120A  
60A  
=
2.32  
V
V
V
V
A
V
3.06  
2.34  
3.37  
60  
T
VJ = 125°C  
120A  
IFAV  
VF0  
rF  
TC  
= 95°C  
average forward current  
threshold voltage  
rectangular  
d = 0.5  
TVJ = 150°C  
1.25  
for power loss calculation only  
slope resistance  
15 m  
RthJC  
TVJ  
Ptot  
IFSM  
IRM  
0.35 K/W  
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
-55  
150  
360  
500  
°C  
W
A
TC  
=
=
25°C  
45°C  
max. forward surge current  
max. reverse recovery current  
TVJ  
t = 10 ms (50 Hz), sine  
45  
60  
A
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
A
IF = 60 A; VR = 600V  
-diF/dt = 1200 A/µs  
reverse recovery time  
junction capacitance  
trr  
200  
350  
27  
ns  
ns  
pF  
CJ  
VR = 600 V; f = 1 MHz  
TVJ = 25°C  
IXYS reserves the right to change limits, conditions and dimensions.  
20110617a  
Data according to IEC 60747and per diode unless otherwise specified  
2011 IXYS all rights reserved  
©

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