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DHG60C600HB PDF预览

DHG60C600HB

更新时间: 2024-11-05 19:49:23
品牌 Logo 应用领域
IXYS 软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
4页 106K
描述
Rectifier Diode, 1 Phase, 2 Element, 30A, 600V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT, PLASTIC PACKAGE-3

DHG60C600HB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:4.48
其他特性:FREE WHEELING DIODE, SNUBBER DIODE应用:FAST SOFT RECOVERY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.21 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:PURE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DHG60C600HB 数据手册

 浏览型号DHG60C600HB的Datasheet PDF文件第2页浏览型号DHG60C600HB的Datasheet PDF文件第3页浏览型号DHG60C600HB的Datasheet PDF文件第4页 
DHG 60 C 600 HB  
preliminary  
VRRM  
IFAV = 2x  
trr  
=
600 V  
Sonic Fast Recovery Diode  
A
30  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Common Cathode  
=
40 ns  
Part number  
1
2
3
DHG 60 C 600 HB  
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Housing: TO-247  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
rIndustry standard outline  
rEpoxy meets UL 94V-0  
rRoHS compliant  
Very soft recovery behaviour  
Avalanche voltage rated for reliable  
operation  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
R a t i n g s  
Conditions  
Symbol  
VRRM  
IR  
Definition  
min. typ. max. Unit  
TVJ  
600  
V
µA  
mA  
V
max. repetitive reverse voltage  
reverse current  
=
=
25°C  
25°C  
VR = 600V  
VR = 600V  
TVJ  
30  
2
TVJ = 125°C  
TVJ 25°C  
forward voltage  
VF  
IF  
IF  
IF  
IF  
=
=
=
=
30A  
60A  
30A  
60A  
=
2.26  
3.11  
2.21  
3.17  
30  
V
T
VJ = 125°C  
V
V
IFAV  
VF0  
rF  
TC  
=
85°C  
A
average forward current  
threshold voltage  
rectangular  
d = 0.5  
TVJ = 150°C  
1.17  
V
for power loss calculation only  
slope resistance  
31 m  
RthJC  
TVJ  
Ptot  
IFSM  
IRM  
0.70 K/W  
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
-55  
150  
180  
200  
°C  
W
A
TC  
=
=
25°C  
45°C  
max. forward surge current  
max. reverse recovery current  
TVJ  
t = 10 ms (50 Hz), sine  
13  
17  
40  
60  
16  
A
TVJ = 25°C  
TVJ = 125°C  
TVJ = 25°C  
TVJ = 125°C  
A
IF = 30 A; VR = 300V  
-diF/dt = 600 A/µs  
reverse recovery time  
junction capacitance  
trr  
ns  
ns  
pF  
CJ  
VR = 400 V; f = 1 MHz  
TVJ = 25°C  
IXYS reserves the right to change limits, conditions and dimensions.  
20110823a  
Data according to IEC 60747and per diode unless otherwise specified  
2011 IXYS all rights reserved  
©

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