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DHG30I600PA PDF预览

DHG30I600PA

更新时间: 2024-11-05 12:31:19
品牌 Logo 应用领域
IXYS 二极管快恢复二极管
页数 文件大小 规格书
3页 101K
描述
Sonic Fast Recovery Diode

DHG30I600PA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AC
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:4.28
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE应用:FAST SOFT RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.24 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DHG30I600PA 数据手册

 浏览型号DHG30I600PA的Datasheet PDF文件第2页浏览型号DHG30I600PA的Datasheet PDF文件第3页 
DHG 30 IM 600 PC  
advanced  
VRRM  
IFAV  
trr  
=
=
=
600 V  
Sonic Fast Recovery Diode  
A
30  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Single Diode  
35 ns  
Part number  
1
2
DHG 30 IM 600 PC  
3
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Housing: TO-263 (D2Pak)  
rIndustry standard outline  
rEpoxy meets UL 94V-0  
rRoHS compliant  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
Very soft recovery behaviour  
Avalanche voltage rated for reliable  
operation  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
R a t i n g s  
Conditions  
Symbol  
VRRM  
IR  
Definition  
min. typ. max. Unit  
TVJ  
600  
V
µA  
mA  
V
max. repetitive reverse voltage  
reverse current  
=
=
25°C  
25°C  
VR = 600V  
VR = 600V  
TVJ  
50  
5
TVJ = 125°C  
TVJ 25°C  
forward voltage  
VF  
IF  
IF  
IF  
IF  
=
=
=
=
30A  
60A  
30A  
60A  
=
2.37  
3.18  
2.22  
3.11  
30  
V
T
VJ = 150°C  
V
V
IFAV  
VF0  
rF  
TC  
=
95°C  
A
average forward current  
threshold voltage  
rectangular  
d = 0.5  
TVJ = 150°C  
1.31  
29.2  
V
for power loss calculation only  
slope resistance  
m
Ω
RthJC  
TVJ  
Ptot  
IFSM  
IRM  
0.60 K/W  
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
-55  
150  
210  
200  
°C  
W
A
TC  
=
=
=
=
=
=
=
25°C  
45°C  
25°C  
°C  
(50 Hz), sine  
max. forward surge current  
max. reverse recovery current  
TVJ  
TVJ  
TVJ  
TVJ  
TVJ  
TVJ  
t = 10 ms  
12  
tbd  
35  
A
A
IF = 35A; VR = 400V  
-diF/dt = 600 A/µs  
reverse recovery time  
junction capacitance  
trr  
25°C  
°C  
ns  
ns  
pF  
tbd  
16  
CJ  
VR = 400 V; f = 1 MHz  
25°C  
IXYS reserves the right to change limits, conditions and dimensions.  
20081031  
Data according to IEC 60747and per diode unless otherwise specified  
2008 IXYS all rights reserved  
©

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