CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
36-Mbit (1M × 36/2M × 18)
Pipelined SRAM
with NoBL™ Architecture (With ECC)
36-Mbit (1M
× 36/2M × 18) Pipelined SRAM with NoBL™ Architecture (With ECC)
Features
Functional Description
The CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/
CY7C1462KVE25 are 2.5 V, 1M × 36/2M × 18 synchronous
pipelined burst SRAMs with No Bus Latency™ (NoBL™) logic,
respectively. They are designed to support unlimited true
back-to-back read/write operations with no wait states. The
CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/
CY7C1462KVE25 are equipped with the advanced NoBL logic
required to enable consecutive read/write operations with data
being transferred on every clock cycle. This feature dramatically
improves the throughput of data in systems that require frequent
write/read transitions. The CY7C1460KV25/CY7C1462KV25/
CY7C1460KVE25/CY7C1462KVE25 are pin-compatible and
functionally equivalent to ZBT devices.
■ Pin-compatible and functionally equivalent to ZBT™
■ Supports 250 MHz bus operations with zero wait states
❐ Availablespeedgradesare250MHz, 200MHz, and167MHz
■ Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
■ Fully registered (inputs and outputs) for pipelined operation
■ Byte Write capability
■ 2.5 V core power supply
■ 2.5 V I/O power supply
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the clock enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle. Write operations are controlled by the byte write selects
■ Fast clock-to-output times
❐ 2.5 ns (for 250 MHz device)
■ Clock enable (CEN) pin to suspend operation
■ Synchronous self-timed writes
BWa–BWd
for
CY7C1460KV25/CY7C1460KVE25
and
■ CY7C1460KV25, CY7C1462KV25, CY7C1460KVE25 and
CY7C1462KVE25 available in JEDEC-standard Pb-free
100-pin TQFP, and Pb-free and non Pb-free 165-ball FBGA
packages.
BWa–BWb for CY7C1462KV25/CY7C1462KVE25 and a write
enable (WE) input. All writes are conducted with on-chip
synchronous self-timed write circuitry.
Three synchronous chip enables (CE1, CE2, CE3) and an
asynchronous output enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
■ IEEE 1149.1 JTAG-Compatible Boundary Scan
■ Burst capability — linear or interleaved burst order
■ “ZZ” sleep mode option
■ On-chip error correction code (ECC) to reduce soft error rate
(SER)
Selection Guide
Description
Maximum access time
250 MHz
2.5
200 MHz
3.2
167 MHz Unit
3.4
170
190
ns
Maximum operating current
× 18
× 36
220
190
mA
240
210
Cypress Semiconductor Corporation
Document Number: 001-66679 Rev. *J
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised February 7, 2018