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CY7C1462KVE25-167BZI PDF预览

CY7C1462KVE25-167BZI

更新时间: 2024-11-17 00:46:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
32页 830K
描述
36-Mbit (1M × 36/2M × 18) Pipelined SRAM with NoBL™ Architecture (With ECC)

CY7C1462KVE25-167BZI 数据手册

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CY7C1460KV25/CY7C1462KV25  
CY7C1460KVE25/CY7C1462KVE25  
36-Mbit (1M × 36/2M × 18)  
Pipelined SRAM  
with NoBL™ Architecture (With ECC)  
36-Mbit (1M  
× 36/2M × 18) Pipelined SRAM with NoBL™ Architecture (With ECC)  
Features  
Functional Description  
The CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/  
CY7C1462KVE25 are 2.5 V, 1M × 36/2M × 18 synchronous  
pipelined burst SRAMs with No Bus Latency™ (NoBL™) logic,  
respectively. They are designed to support unlimited true  
back-to-back read/write operations with no wait states. The  
CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/  
CY7C1462KVE25 are equipped with the advanced NoBL logic  
required to enable consecutive read/write operations with data  
being transferred on every clock cycle. This feature dramatically  
improves the throughput of data in systems that require frequent  
write/read transitions. The CY7C1460KV25/CY7C1462KV25/  
CY7C1460KVE25/CY7C1462KVE25 are pin-compatible and  
functionally equivalent to ZBT devices.  
Pin-compatible and functionally equivalent to ZBT™  
Supports 250 MHz bus operations with zero wait states  
Availablespeedgradesare250MHz, 200MHz, and167MHz  
Internally self-timed output buffer control to eliminate the need  
to use asynchronous OE  
Fully registered (inputs and outputs) for pipelined operation  
Byte Write capability  
2.5 V core power supply  
2.5 V I/O power supply  
All synchronous inputs pass through input registers controlled by  
the rising edge of the clock. All data outputs pass through output  
registers controlled by the rising edge of the clock. The clock  
input is qualified by the clock enable (CEN) signal, which when  
deasserted suspends operation and extends the previous clock  
cycle. Write operations are controlled by the byte write selects  
Fast clock-to-output times  
2.5 ns (for 250 MHz device)  
Clock enable (CEN) pin to suspend operation  
Synchronous self-timed writes  
BWa–BWd  
for  
CY7C1460KV25/CY7C1460KVE25  
and  
CY7C1460KV25, CY7C1462KV25, CY7C1460KVE25 and  
CY7C1462KVE25 available in JEDEC-standard Pb-free  
100-pin TQFP, and Pb-free and non Pb-free 165-ball FBGA  
packages.  
BWa–BWb for CY7C1462KV25/CY7C1462KVE25 and a write  
enable (WE) input. All writes are conducted with on-chip  
synchronous self-timed write circuitry.  
Three synchronous chip enables (CE1, CE2, CE3) and an  
asynchronous output enable (OE) provide for easy bank  
selection and output three-state control. In order to avoid bus  
contention, the output drivers are synchronously three-stated  
during the data portion of a write sequence.  
IEEE 1149.1 JTAG-Compatible Boundary Scan  
Burst capability — linear or interleaved burst order  
“ZZ” sleep mode option  
On-chip error correction code (ECC) to reduce soft error rate  
(SER)  
Selection Guide  
Description  
Maximum access time  
250 MHz  
2.5  
200 MHz  
3.2  
167 MHz Unit  
3.4  
170  
190  
ns  
Maximum operating current  
× 18  
× 36  
220  
190  
mA  
240  
210  
Cypress Semiconductor Corporation  
Document Number: 001-66679 Rev. *J  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised February 7, 2018  

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