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CY7C1303AV18-133BZC PDF预览

CY7C1303AV18-133BZC

更新时间: 2024-10-31 05:09:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
20页 481K
描述
18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Architecture

CY7C1303AV18-133BZC 数据手册

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CY7C1303AV18  
CY7C1306AV18  
PRELIMINARY  
18-MbBurstof2PipelinedSRAMwithQDRArchitecture  
Features  
Functional Description  
• Separate independent Read and Write data ports  
The CY7C1303AV18 and CY7C1306AV18 are 1.8V  
Synchronous Pipelined SRAMs equipped with QDR™ archi-  
tecture. QDR architecture consists of two separate ports to  
access the memory array. The Read port has dedicated Data  
Outputs to support Read operations and the Write Port has  
dedicated Data inputs to support Write operations. Access to  
each port is accomplished through a common address bus.  
The Read address is latched on the rising edge of the K clock  
and the Write address is latched on the rising edge of K clock.  
QDR has separate data inputs and data outputs to completely  
eliminate the need to “turn-around” the data bus required with  
common I/O devices. Accesses to the CY7C1303AV18/  
CY7C1306AV18 Read and Write ports are completely  
independent of one another. All accesses are initiated  
synchronously on the rising edge of the positive input clock  
(K). In order to maximize data throughput, both Read and  
Write ports are equipped with Double Data Rate (DDR) inter-  
faces. Therefore, data can be transferred into the device on  
every rising edge of both input clocks (K and K) and out of the  
device on every rising edge of the output clock (C and C, or K  
and K when in single clock mode) thereby maximizing perfor-  
mance while simplifying system design. Each address location  
is associated with two 18-bit words (CY7C1303AV18) or two  
36-bit words (CY7C1306AV18) that burst sequentially into or  
out of the device.  
— Supports concurrent transactions  
• 167-MHz Clock for high bandwidth  
— 2.5 ns Clock-to-Valid access time  
• 2-Word Burst on all accesses  
• Double Data Rate (DDR) interfaces on both Read and  
Write Ports (data transferred at 333 MHz) @167 MHz  
• Two input clocks (K and K) for precise DDR timing  
— SRAM uses rising edges only  
• Two output clocks (C and C) account for clock skew  
and flight time mismatching  
• Single multiplexed address input bus latches address  
inputs for both Read and Write ports  
• Separate Port Selects for depth expansion  
• Synchronous internally self-timed writes  
• 1.8V core power supply with HSTL Inputs and Outputs  
• 13 x 15 x 1.4 mm 1.0-mm pitch fBGA package, 165 ball  
(11x15 matrix)  
• Variable drive HSTL output buffers  
• Expanded HSTL output voltage (1.4V–1.9V)  
• JTAG Interface  
Depth expansion is accomplished with a Port Select input for  
each port. Each Port Selects allow each port to operate  
independently.  
All synchronous inputs pass through input registers controlled  
by the K or K input clocks. All data outputs pass through output  
registers controlled by the C or C input clocks. Writes are  
conducted with on-chip synchronous self-timed write circuitry.  
• Variable Impedance HSTL  
Configurations  
CY7C1303AV18 – 1M x 18  
CY7C1306AV18 – 512K x 36  
Logic Block Diagram (CY7C1303AV18)  
D[17:0]  
18  
Write  
Write  
Data Reg  
Data Reg  
Address  
Register  
A
(18:0)  
Address  
Register  
A(18:0)  
19  
19  
512Kx18 512Kx18  
Memory Memory  
Array  
Array  
K
CLK  
Gen.  
RPS  
Control  
Logic  
K
C
C
Read Data Reg.  
36  
18  
Vref  
18  
Reg.  
Reg.  
Reg.  
18  
18  
Control  
Logic  
WPS  
18  
BWS0  
Q[17:0]  
BWS1  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05492 Rev. *A  
Revised June 1, 2004  

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