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CY7C1297F-117AC PDF预览

CY7C1297F-117AC

更新时间: 2024-10-01 03:13:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
15页 441K
描述
1-Mbit (64K x 18) Flow-Through Sync SRAM

CY7C1297F-117AC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:14 X 20 MM, 1.4 MM HEIGHT, PLASTIC, TQFP-100
针数:100Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.81Is Samacsys:N
最长访问时间:6.5 ns其他特性:FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK):117 MHzI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm内存密度:1179648 bit
内存集成电路类型:CACHE SRAM内存宽度:18
湿度敏感等级:3功能数量:1
端子数量:100字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.04 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.22 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:14 mm
Base Number Matches:1

CY7C1297F-117AC 数据手册

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CY7C1297F  
1-Mbit (64K x 18) Flow-Through Sync SRAM  
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the  
first address in a burst and increments the address automati-  
cally for the rest of the burst access. All synchronous inputs  
are gated by registers controlled by a positive-edge-triggered  
Features  
• 64K x 18 common I/O  
• 3.3V –5% and +10% core power supply (VDD  
• 3.3V I/O supply (VDDQ  
• Fast clock-to-output times  
— 6.5 ns (133-MHz version)  
— 7.5 ns (117-MHz version)  
)
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
(CE1), depth-expansion Chip Enables (CE2 and CE3), Burst  
Control inputs (ADSC, ADSP, and ADV), Write Enables  
(BW[A:B], and BWE), and Global Write (GW). Asynchronous  
inputs include the Output Enable (OE) and the ZZ pin.  
)
• Provide high-performance 2-1-1-1 access rate  
The CY7C1297F allows either interleaved or linear burst  
sequences, selected by the MODE input pin. A HIGH selects  
an interleaved burst sequence, while a LOW selects a linear  
burst sequence. Burst accesses can be initiated with the  
Processor Address Strobe (ADSP) or the cache Controller  
Address Strobe (ADSC) inputs. Address advancement is  
controlled by the Address Advancement (ADV) input.  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or  
Address Strobe Controller (ADSC) are active. Subsequent  
burst addresses can be internally generated as controlled by  
the Advance pin (ADV).  
• User-selectable burst counter supporting Intel  
Pentiuminterleaved or linear burst sequences  
• Separate processor and controller address strobes  
• Synchronous self-timed write  
• Asynchronous output enable  
• Supports 3.3V I/O level  
• Offered in JEDEC-standard 100-pin TQFP  
• “ZZ” Sleep Mode option  
Functional Description[1]  
The CY7C1297F is a 131,072 x 18 synchronous cache RAM  
designed to interface with high-speed microprocessors with  
minimum glue logic. Maximum access delay from clock rise is  
The CY7C1297F operates from a +3.3V core power supply  
while all outputs may operate with either a +3.3V supply. All  
inputs and outputs are JEDEC-standard JESD8-5-compatible.  
Logic Block Diagram  
ADDRESS  
REGISTER  
A0,A1,A  
A[1:0]  
MODE  
Q1  
ADV  
CLK  
BURST  
COUNTER AND  
LOGIC  
CLR  
Q0  
ADSC  
ADSP  
DQ  
B,DQPB  
DQ  
B,DQPB  
WRITE DRIVER  
WRITE REGISTER  
BW  
B
A
MEMORY  
ARRAY  
OUTPUT  
BUFFERS  
DQs  
DQP  
DQP  
SENSE  
AMPS  
A
B
DQ  
A,DQPA  
DQA,DQPA  
WRITE REGISTER  
WRITE DRIVER  
BW  
BWE  
GW  
INPUT  
REGISTERS  
ENABLE  
REGISTER  
CE  
CE  
CE  
1
2
3
OE  
SLEEP  
CONTROL  
ZZ  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05429 Rev. *B  
Revised December 21, 2004  

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