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CY7C1298F-133AXC PDF预览

CY7C1298F-133AXC

更新时间: 2024-02-24 11:40:50
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
15页 343K
描述
Standard SRAM, 64KX18, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

CY7C1298F-133AXC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.8
最长访问时间:4 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PQFP-G100JESD-609代码:e4
长度:20 mm内存密度:1179648 bit
内存集成电路类型:STANDARD SRAM内存宽度:18
湿度敏感等级:3功能数量:1
端子数量:100字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX18封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:NICKEL PALLADIUM GOLD
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:20
宽度:14 mmBase Number Matches:1

CY7C1298F-133AXC 数据手册

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CY7C1298F  
1-Mbit (64K x 18) Pipelined DCD Sync SRAM  
Features  
Functional Description[1]  
• Registered inputs and outputs for pipelined operation  
• Optimal for performance (Double-Cycle deselect)  
— Depth expansion without wait state  
The CY7C1298F SRAM integrates 65,536x18 SRAM cells  
with advanced synchronous peripheral circuitry and a two-bit  
counter for internal burst operation. All synchronous inputs are  
gated by registers controlled by a positive-edge-triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
• 64K × 18-bit common I/O architecture  
• 3.3V –5% and +10% core power supply (VDD  
)
(
), depth-expansion Chip Enables (CE and  
), Burst  
CE3  
CE1  
2
• 3.3V I/O supply (VDDQ  
)
Control inputs (  
,
,
and  
ADSC ADSP  
), Write Enables  
ADV  
(
, and  
BW[A:B]  
), and Global Write (  
). Asynchronous  
GW  
BWE  
• Fast clock-to-output times  
— 3.5ns (for 166-MHz device)  
— 4.0ns (for 133-MHz device)  
inputs include the Output Enable ( ) and the ZZ pin.  
OE  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (  
) or  
ADSP  
Address Strobe Controller (  
) are active. Subsequent  
ADSC  
• Provide high-performance 3-1-1-1 access rate  
burst addresses can be internally generated as controlled by  
the Advance pin ( ).  
• User-selectable burst counter supporting Intel  
ADV  
Pentiuminterleaved or linear burst sequences  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to two bytes wide as  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
• Asynchronous Output Enable  
• JEDEC-standard 100-pin TQFP package and pinout  
• “ZZ” Sleep Mode option  
controlled by the byte write control inputs.  
active  
GW  
LOW  
This device incorporates an  
causes all bytes to be written.  
additional pipelined enable register which delays turning off  
the output buffers an additional cycle when a deselect is  
executed.This feature allows depth expansion without penal-  
izing system performance.  
The CY7C1298F operates from a +3.3V core power supply  
while all outputs operate with a +3.3V supply. All inputs and  
outputs are JEDEC-standard JESD8-5-compatible.  
Selection Guide  
166 MHz  
3.5  
133 MHz  
4.0  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Maximum CMOS Standby Current  
240  
40  
225  
40  
mA  
mA  
Shaded areas contain advance information. Please contact your local CYpress sales representative for availability of these parts.  
Note:  
1. . For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05417 Rev. *A  
Revised April 7, 2004  

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