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CY7C1300A

更新时间: 2024-02-04 18:23:00
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
13页 154K
描述
128K X 36 Dual I/O Dual Address Synchronous SRAM

CY7C1300A 数据手册

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CY7C1300A  
128K X 36 Dual I/O Dual Address Synchronous SRAM  
The CY7C1300A allows the user to concurrently perform  
Reads, Writes, or pass-through cycles in combination on the  
Features  
Fast clock speed: 100 and 83 MHz  
Fast access times: 5.0/6.0 ns max.  
Single clock operation  
Single 3.3V –5% and +5% power supply VCC  
Separate VCCQ for output buffer  
Two chip enables for simple depth expansion  
Address, data input, CE1X, CE2X, CE1Y, CE2Y, PTX,  
PTY, WEX, WEY, and data output registers on-chip  
two data ports. The two address ports (AX, AY) determine the  
Read or Write locations for their respective data ports (DQX,  
DQY).  
All input pins except output enable pins (OEX, OEY) are gated  
by registers controlled by a positive-edge-triggered clock  
(CLK) input. The synchronous inputs include all addresses,  
data inputs, depth-expansion chip enables (CE1X, CE2X,  
CE1Y and CE2Y), pass-through controls (PTX and PTY), and  
ReadWrite control (WEX and WEY).  
Concurrent Reads and Writes  
Two bidirectional data buses  
Can be configured as separate I/O  
Pass-through feature  
Asynchronous output enables (OEX, OEY)  
LVTTL-compatible I/O  
Self-timed Write  
Automatic power-down  
176-pin TQFP package  
The pass-through feature allows data to be passed from one  
port to another, in either direction. The PTX input must be  
asserted to pass data from port X to port Y. The PTY will  
likewise pass data from port Y to port X. A pass-through  
operation takes precedence over a Read operation.  
When AX and AY are the same, certain protocols are followed.  
If both ports are Read, the reads occur normally. If one port is  
written and the other is read, the read from the array will occur  
before the data is written. If both ports are written, only the data  
on DQY will be written to the array.  
The CY7C1300A operates from a +3.3V power supply. All  
inputs and outputs are LVTTL-compatible. These dual I/O,  
dual address synchronous SRAMs are well suited for ATM,  
Ethernet switches, routers, cell/frame buffers, SNA switches,  
and shared memory applications.  
Functional Description  
The CY7C1300A SRAM integrates 131,072 × 36 SRAM cells  
with advanced synchronous peripheral circuitry. It employs  
high-speed, low-power CMOS designs using advanced  
triple-layer polysilicon, double-layer metal technology. Each  
memory cell consists of four transistors and two high-valued  
resistors.  
The CY7C1300A needs one extra cycle after power for proper  
power-on reset. The extra cycle is needed after VCC is stable  
on the device.  
This device is available in a 176-pin TQFP package.  
Logic Block Diagram[1]  
Y
Note:  
1. For 128K x 36 devices, AX and AY are 17-bit-wide buses.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05075 Rev. *C  
Revised January 19, 2003  

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