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CY7C1302CV25-100 PDF预览

CY7C1302CV25-100

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
18页 293K
描述
9-Mbit Burst of Two Pipelined SRAMs with QDR⑩ Architecture

CY7C1302CV25-100 数据手册

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CY7C1302CV25  
PREMILINARY  
9-Mbit Burst of Two Pipelined SRAMs  
with QDR™ Architecture  
Functional Description  
Features  
• Separate independent Read and Write data ports  
— Supports concurrent transactions  
• 167-MHz clock for high bandwidth  
— 2.5 ns clock-to-Valid access time  
• 2-word burst on all accesses  
The CY7C1302CV25 is a 2.5V Synchronous Pipelined SRAM  
equipped with QDR™ architecture. QDR architecture consists  
of two separate ports to access the memory array. The Read  
port has dedicated data outputs to support Read operations  
and the Write Port has dedicated data inputs to support Write  
operations. Access to each port is accomplished through a  
common address bus. The Read address is latched on the  
• Double Data Rate (DDR) interfaces on both Read and  
rising edge of the K clock and the Write address is latched on  
the rising edge of K clock. QDR has separate data inputs and  
data outputs to completely eliminate the need to “turn-around”  
the data bus required with common I/O devices. Accesses to  
the CY7C1302CV25 Read and Write ports are completely  
independent of one another. All accesses are initiated  
synchronously on the rising edge of the positive input clock  
(K). In order to maximize data throughput, both Read and  
Write ports are equipped with DDR interfaces. Therefore, data  
can be transferred into the device on every rising edge of both  
input clocks (K and K) and out of the device on every rising  
edge of the output clock (C and C, or K and K in a single clock  
domain) thereby maximizing performance while simplifying  
system design. Each address location is associated with two  
18-bit words that burst sequentially into or out of the device.  
Write ports (data transferred at 333 MHz) @ 167 MHz  
• Two input clocks (K and K) for precise DDR timing  
— SRAM uses rising edges only  
• Two output clocks (C and C) account for clock skew  
and flight time mismatching  
• Single multiplexed address input bus latches address  
inputs for both Read and Write ports  
• Separate Port Selects for depth expansion  
• Synchronous internally self-timed writes  
• 2.5V core power supply with HSTL Inputs and Outputs  
• 13 x 15 x 1.4 mm 1.0-mm pitch fBGA package, 165 ball  
(11 x 15 matrix)  
Depth expansion is accomplished with a Port Select input for  
each port. Each Port Select allows each port to operate  
independently.  
All synchronous inputs pass through input registers controlled  
by the K or K input clocks. All data outputs pass through output  
registers controlled by the C or C (or K or K in a single clock  
domain) input clocks. Writes are conducted with on-chip  
synchronous self-timed write circuitry.  
• Variable drive HSTL output buffers  
• Expanded HSTL output voltage (1.4V–1.9V)  
• JTAG Interface  
Configurations  
CY7C1302CV25 – 512K x 18  
Logic Block Diagram (CY7C1302CV25)  
D[17:0]  
18  
Write  
Write  
Data Reg  
Data Reg  
Address  
Register  
A
(17:0)  
Address  
Register  
A(17:0)  
18  
18  
256Kx18 256Kx18  
Memory Memory  
Array  
Array  
K
CLK  
Gen.  
RPS  
Control  
Logic  
K
C
C
Read Data Reg.  
36  
18  
Vref  
18  
Reg.  
Reg.  
Reg.  
18  
18  
Control  
Logic  
WPS  
18  
BWS0  
Q[17:0]  
BWS1  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05491 Rev. *A  
Revised June 1, 2004  

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