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CY7C1301A

更新时间: 2024-02-17 21:46:22
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Memory

CY7C1301A 数据手册

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CY7C1301A  
256K X 36 Dual I/O, Dual Address Synchronous SRAM  
The CY7C1301A allows the user to concurrently perform  
reads, writes, or pass-through cycles in combination on the  
two data ports. The two address ports (AX, AY) determine the  
read or write locations for their respective data ports (DQX,  
DQY).  
Features  
• Fast Clock Speed: 100 and 83 MHz  
• Fast Access Times: 5.0/6.0 ns Max.  
• Single Clock Operation  
All input pins except Output Enable pins (OEX, OEY) are  
gated by registers controlled by a positive-edge-triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, depth-expansion Chip Enables  
(CE1X, CE2X, CE1Y and CE2Y), Pass-Through controls (PTX  
and PTY), and Read-Write control (WEX and WEY).  
• Single 3.3V –5% and +5% power supply VCC  
• Separate VCCQ for output buffer  
• Two Chip Enables for simple depth expansion  
• Address, Data Input, CE1X, CE2X, CE1Y, CE2Y, PTX,  
PTY, WEX, WEY, and Data Output Registers On-Chip  
• Concurrent Reads and Writes  
• Two bidirectional Data Buses  
• Can be configured as separate I/O  
• Pass-Through feature  
• Asynchronous Output Enables (OEX, OEY)  
• LVTTL-Compatible I/O  
• Self-Timed write  
• Automatic power-down  
• 176-Pin TQFP Package  
The pass-through feature allows data to be passed from one  
port to the other, in either direction. The PTX input must be  
asserted to pass data from port X to port Y. The PTY will  
likewise pass data from port Y to port X. A pass-through  
operation takes precedence over a read operation.  
For the case when AX and AY are the same, certain protocols  
are followed. If both ports are read, the reads occur normally.  
If one port is written and the other is read, the read from the  
array will occur before the data is written. If both ports are  
written, only the data on DQY will be written to the array.  
The CY7C1301A operates from a +3.3V power supply. All  
inputs and outputs are LVTTL-compatible. These dual I/O,  
dual address synchronous SRAMs are well suited for ATM,  
Ethernet switches, routers, cell/frame buffers, SNA switches  
and shared memory applications.  
Functional Description  
The CY7C1301A SRAM integrates 262,144 x 36 SRAM cells  
with advanced synchronous peripheral circuitry. It employs  
high-speed, low-power CMOS designs using advanced  
triple-layer polysilicon, double-layer metal technology. Each  
memory cell consists of four transistors and two high-valued  
resistors.  
The CY7C1301A device needs one extra cycle after power for  
proper power on reset. The extra cycle is needed after VCC is  
stable on the device. This device is available in a 176-pin  
TQFP package.  
Logic Block Diagram[1]  
18/17  
*AX  
18/17  
AY*  
Address  
Register  
Address  
Register  
256K/128K x 9 x 4  
SRAM Array  
WEX#  
PTX#  
WEY#  
PTY#  
Write X  
Register  
Write  
Driver  
Sensing  
Amplifiers  
Sensing  
Amplifiers  
Write  
Driver  
Write Y  
Register  
PTX  
Register  
PTX  
Register  
Pass-Through  
Data In  
Register  
Output  
Register  
Output  
Register  
Data In  
Register  
CLK  
CLK  
CE1X#  
CE2X  
CE1Y#  
CE2Y  
DQX  
DQY  
Chip Enable  
Register  
Chip Enable  
Register  
Chip Enable  
Register  
Chip Enable  
Register  
OEX#  
OEY#  
Note:  
1. For 256 × 36 device, AX and AY are 18-bit-wide buses.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document # 38-05076 Rev. *C  
Revised January 19, 2003  

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