CY7C1301A
256K X 36 Dual I/O, Dual Address Synchronous SRAM
The CY7C1301A allows the user to concurrently perform
reads, writes, or pass-through cycles in combination on the
two data ports. The two address ports (AX, AY) determine the
read or write locations for their respective data ports (DQX,
DQY).
Features
• Fast Clock Speed: 100 and 83 MHz
• Fast Access Times: 5.0/6.0 ns Max.
• Single Clock Operation
All input pins except Output Enable pins (OEX, OEY) are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, depth-expansion Chip Enables
(CE1X, CE2X, CE1Y and CE2Y), Pass-Through controls (PTX
and PTY), and Read-Write control (WEX and WEY).
• Single 3.3V –5% and +5% power supply VCC
• Separate VCCQ for output buffer
• Two Chip Enables for simple depth expansion
• Address, Data Input, CE1X, CE2X, CE1Y, CE2Y, PTX,
PTY, WEX, WEY, and Data Output Registers On-Chip
• Concurrent Reads and Writes
• Two bidirectional Data Buses
• Can be configured as separate I/O
• Pass-Through feature
• Asynchronous Output Enables (OEX, OEY)
• LVTTL-Compatible I/O
• Self-Timed write
• Automatic power-down
• 176-Pin TQFP Package
The pass-through feature allows data to be passed from one
port to the other, in either direction. The PTX input must be
asserted to pass data from port X to port Y. The PTY will
likewise pass data from port Y to port X. A pass-through
operation takes precedence over a read operation.
For the case when AX and AY are the same, certain protocols
are followed. If both ports are read, the reads occur normally.
If one port is written and the other is read, the read from the
array will occur before the data is written. If both ports are
written, only the data on DQY will be written to the array.
The CY7C1301A operates from a +3.3V power supply. All
inputs and outputs are LVTTL-compatible. These dual I/O,
dual address synchronous SRAMs are well suited for ATM,
Ethernet switches, routers, cell/frame buffers, SNA switches
and shared memory applications.
Functional Description
The CY7C1301A SRAM integrates 262,144 x 36 SRAM cells
with advanced synchronous peripheral circuitry. It employs
high-speed, low-power CMOS designs using advanced
triple-layer polysilicon, double-layer metal technology. Each
memory cell consists of four transistors and two high-valued
resistors.
The CY7C1301A device needs one extra cycle after power for
proper power on reset. The extra cycle is needed after VCC is
stable on the device. This device is available in a 176-pin
TQFP package.
Logic Block Diagram[1]
18/17
*AX
18/17
AY*
Address
Register
Address
Register
256K/128K x 9 x 4
SRAM Array
WEX#
PTX#
WEY#
PTY#
Write X
Register
Write
Driver
Sensing
Amplifiers
Sensing
Amplifiers
Write
Driver
Write Y
Register
PTX
Register
PTX
Register
Pass-Through
Data In
Register
Output
Register
Output
Register
Data In
Register
CLK
CLK
CE1X#
CE2X
CE1Y#
CE2Y
DQX
DQY
Chip Enable
Register
Chip Enable
Register
Chip Enable
Register
Chip Enable
Register
OEX#
OEY#
Note:
1. For 256 × 36 device, AX and AY are 18-bit-wide buses.
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
Document # 38-05076 Rev. *C
Revised January 19, 2003