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CY7C1302BV25-133BZC PDF预览

CY7C1302BV25-133BZC

更新时间: 2023-02-26 14:02:42
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
26页 412K
描述
QDR SRAM, 512KX18, 3ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165

CY7C1302BV25-133BZC 数据手册

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CY7C1302BV25  
Preliminary  
9 Mb Burst of 2 Pipelined SRAM with QDR Architecture  
Features  
Functional Description  
• Separate Independent Read and Write Data Ports  
Supports concurrent transactions  
• 167 MHz Clock for High Bandwidth  
2.5 ns Clock-to-Valid access time  
• 2-Word Burst on all accesses  
• Double Data Rate (DDR) interfaces on both Read &  
Write Ports (data transferred at 333 MHz) @167 MHz  
• Two input clocks (K and K) for precise DDR timing  
SRAM uses rising edges only  
• Two output clocks (C and C) accounts for clock skew  
and flight time mis-matches  
• Single multiplexed address input bus latches address  
inputs for both READ and WRITE ports  
• Separate Port Selects for depth expansion  
• Synchronous internally self-timed writes  
• 2.5V core power supply with HSTL Inputs and Outputs  
The CY7C1302BV25 is a 2.5V Synchronous Pipelined  
SRAMs equipped with QDR architecture. QDR architecture  
consists of two separate ports to access the memory array.  
The Read port has dedicated Data Outputs to support Read  
operations and the Write Port has dedicated Data inputs to  
support Write operations. Access to each port is accomplished  
through a common address bus. The Read address is latched  
on the rising edge of the K clock and the Write address is  
latched on the rising edge of K clock. QDR has separate data  
inputs and data outputs to completely eliminate the need to  
“turn-around” the data bus required with common I/O devices.  
Accesses to the CY7C1302BV25 Read and Write ports are  
completely independent of one another. All accesses are initi-  
ated synchronously on the rising edge of the positive input  
clock (K). In order to maximize data throughput, both Read  
and Write ports are equipped with Double Data Rate (DDR)  
interfaces. Therefore, data can be transferred into the device  
on every rising edge of both input clocks (K and K) and out of  
the device on every rising edge of the output clock (C and C)  
thereby maximizing performance while simplifying system de-  
sign. Each address location is associated with two 18-bit  
words that burst sequentially into or out of the device.  
• 13x15 mm 1.0 mm pitch fBGA package, 165 ball  
(11x15 matrix) Variable drive HSTL output buffers  
• Expanded HSTL output voltage (1.4V–1.9V)  
• JTAG Interface  
Depth expansion is accomplished with a Port Select input for  
each port. Each Port Selects allow each port to operate inde-  
pendently.  
• Variable Impedance HSTL  
Configurations  
CY7C1302BV25 – 512 Kb x 18  
All synchronous inputs pass through input registers controlled  
by the K orK input clocks. All data outputs pass through output  
registers controlled by the C or C input clocks. Writes are con-  
ducted with on-chip synchronous self-timed write circuitry.  
Logic Block Diagram (CY7C1302BV25)  
D[17:0]  
18  
Write  
Write  
Data Reg  
Data Reg  
Address  
Register  
A
(17:0)  
Address  
Register  
A(17:0)  
18  
18  
256Kx18 256Kx18  
Memory Memory  
Array  
Array  
K
CLK  
Gen.  
RPS  
Control  
Logic  
K
C
C
Read Data Reg.  
36  
18  
Vref  
18  
Reg.  
Reg.  
Reg.  
18  
18  
Control  
Logic  
WPS  
BWS0  
18  
Q[17:0]  
BWS1  
CypressSemiconductorCorporation  
Document #: 38-05XXX Rev. **  
3901NorthFirstStreet  
SanJose  
CA 95134  
408-943-2600  
Revised April 14, 2003  

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