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CY7C1301A-133AC PDF预览

CY7C1301A-133AC

更新时间: 2024-02-23 19:14:52
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟静态存储器内存集成电路
页数 文件大小 规格书
15页 218K
描述
Dual-Port SRAM, 256KX36, 4ns, CMOS, PQFP176, 24 X 24 MM, 1.40 MM HEIGHT, TQFP-176

CY7C1301A-133AC 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:QFP包装说明:24 X 24 MM, 1.40 MM HEIGHT, TQFP-176
针数:176Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.91Is Samacsys:N
最长访问时间:4 ns最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMONJESD-30 代码:S-PQFP-G176
JESD-609代码:e0长度:24 mm
内存密度:9437184 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:36功能数量:1
端口数量:2端子数量:176
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LFQFP封装等效代码:QFP176,1.0SQ,20
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.1 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.4 mA最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:24 mmBase Number Matches:1

CY7C1301A-133AC 数据手册

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301A  
PRELIMINARY  
CY7C1301A  
256K X 36 Dual I/O Dual Address Synchronous SRAM  
The CY7C1301A allows the user to concurrently perform  
reads, writes, or pass-through cycles in combination on the  
Features  
Fast clock speed: 133, 100, and 83 MHz  
Fast Access Times: 4.0/5.0/6.0 ns Max.  
Single Clock Operation  
two data ports. The two address ports (AX, AY) determine the  
read or write locations for their respective data ports (DQX,  
DQY).  
All input pins except output enable pins (OEX, OEY) are gated  
by registers controlled by a positive-edge-triggered clock input  
(CLK). The synchronous inputs include all addresses, all data  
inputs, depth-expansion chip enables (CE1X, CE2X, CE1Y  
and CE2Y), pass-through controls (PTX and PTY), and  
read-write control (WEX and WEY).  
Single 3.3V 5% and +5% power supply VCC  
Separate VCCQ for output buffer  
Two chip enables for simple depth expansion  
Address, DataInput, CE1X, CE2X, CE1Y, CE2Y, PTX, PTY,  
WEX, WEY, and Data Output Registers On-Chip  
Concurrent Reads and Writes  
Two bidirectional Data Buses  
Can be configured as separate I/O  
Pass-Through feature  
Asynchronous Output Enables (OEX, OEY)  
LVTTL-Compatible I/O  
The pass-through feature allows data to be passed from one  
port to the other, in either direction. The PTX# input must be  
asserted to pass data from port X to port Y. The PTY# will  
likewise pass data from port Y to port X. A pass-through oper-  
ation takes precedence over a read operation.  
For the case when AX and AY are the same, certain protocols  
are followed. If both ports are read, the reads occur normally.  
If one port is written and the other is read, the read from the  
array will occur before the data is written. If both ports are  
written, only the data on DQY will be written to the array.  
Self-Timed write  
Automatic power-down  
176-Pin TQFP Package  
The CY7C1301A operate from a +3.3V power supply. All in-  
puts and outputs are LVTTL compatible. These dual I/O, dual  
address synchronous SRAMs are well suited for ATM, Ether-  
net switches, routers, cell/frame buffers, SNA switches and  
shared memory applications.  
Functional Description  
The CY7C1301A SRAM integrates 262,144 x 36 SRAM cells  
with advanced synchronous peripheral circuitry. It employs  
high-speed, low power CMOS designs using advanced tri-  
ple-layer polysilicon, double-layer metal technology. Each  
memory cell consists of four transistors and two high valued  
resistors.  
The CY7C1301A device needs one extra cycle after power for  
proper power on reset. The extra cycle is needed after Vcc is  
stable on the device.  
This device is available in a 176-pin TQFP package.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05076 Rev. **  
Revised June 6, 2001  

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