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CY7C1011CV33-12ZI PDF预览

CY7C1011CV33-12ZI

更新时间: 2024-09-17 22:03:19
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
11页 334K
描述
128K x 16 Static RAM

CY7C1011CV33-12ZI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2-44
针数:44Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.81最长访问时间:12 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:18.415 mm
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:44
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.194 mm最大待机电流:0.01 A
最小待机电流:3 V子类别:SRAMs
最大压摆率:0.095 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:10.16 mmBase Number Matches:1

CY7C1011CV33-12ZI 数据手册

 浏览型号CY7C1011CV33-12ZI的Datasheet PDF文件第2页浏览型号CY7C1011CV33-12ZI的Datasheet PDF文件第3页浏览型号CY7C1011CV33-12ZI的Datasheet PDF文件第4页浏览型号CY7C1011CV33-12ZI的Datasheet PDF文件第5页浏览型号CY7C1011CV33-12ZI的Datasheet PDF文件第6页浏览型号CY7C1011CV33-12ZI的Datasheet PDF文件第7页 
CY7C1011CV33  
128K x 16 Static RAM  
written into the location specified on the address pins (A0  
through A16). If Byte High Enable (BHE) is LOW, then data  
from I/O pins (I/O8 through I/O15) is written into the location  
specified on the address pins (A0 through A16).  
Features  
• Pin equivalent to CY7C1011BV33  
• High speed  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing the  
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,  
then data from the memory location specified by the address  
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is  
LOW, then data from memory will appear on I/O8 to I/O15. See  
the truth table at the back of this data sheet for a complete  
description of read and write modes.  
— tAA = 10 ns  
• Low active power  
— 360 mW (max.)  
• Data Retention at 2.0  
• Automatic power-down when deselected  
• Independent control of upper and lower bits  
• Easy memory expansion with CE and OE features  
The input/output pins (I/O0 through I/O15) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE  
are disabled (BHE, BLE HIGH), or during a write operation (CE  
LOW, and WE LOW).  
• Available in 44-pin TSOP II, 44-pin TQFP, and 48-ball  
VFBGA  
Functional Description  
The CY7C1011CV33 is a high-performance CMOS Static  
RAM organized as 131,072 words by 16 bits.  
The CY7C1011CV33 is available in a standard 44-pin TSOP  
II package with center power and ground pinout, a 44-pin Thin  
Plastic Quad Flatpack (TQFP), as well as a 48-ball fine-pitch  
ball grid array (VFBGA) package.  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is  
Logic Block Diagram  
Pin Configuration  
TSOP II  
Top View  
INPUT BUFFER  
44  
1
A
4
A
5
A
0
43  
42  
41  
40  
39  
38  
A
A
2
3
4
5
6
3
6
A
1
A
A
2
7
A
2
OE  
A
1
I/O – I/O  
256K x 16  
ARRAY  
0
7
A
3
4
BHE  
BLE  
I/O  
I/O  
I/O  
A
0
A
CE  
1024 x 4096  
A
I/O I/O  
5
6
8
15  
I/O  
7
0
15  
A
37  
36  
35  
34  
33  
I/O  
I/O  
8
1
2
14  
13  
12  
A
7
8
9
A
10  
11  
12  
13  
I/O  
V
SS  
I/O  
3
CC  
V
SS  
V
V
CC  
COLUMN  
DECODER  
32  
I/O  
I/O  
I/O  
4
5
6
7
11  
10  
I/O  
I/O  
I/O  
31  
30  
29  
28  
14  
15  
16  
I/O  
I/O  
9
8
WE 17  
NC  
A
18  
15 19  
20  
27  
26  
25  
16  
A
BHE  
8
A
A
9
WE  
CE  
OE  
A
A
A
A
11  
14  
13  
10  
21  
22  
A
24  
23  
BLE  
NC  
12  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05232 Rev. *B  
Revised October 10, 2002  

CY7C1011CV33-12ZI 替代型号

型号 品牌 替代类型 描述 数据表
CY7C1011CV33-12ZXI CYPRESS

完全替代

2-Mbit (128K x 16) Static RAM
CY7C1011CV33-12AI CYPRESS

类似代替

128K x 16 Static RAM

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CY7C1011CV33-12ZXCT CYPRESS

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CY7C1011CV33-12ZXI CYPRESS

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CY7C1011CV33-12ZXIT CYPRESS

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CY7C1011CV33-15AC CYPRESS

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128K x 16 Static RAM
CY7C1011CV33-15ACT CYPRESS

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Standard SRAM, 128KX16, 15ns, CMOS, PQFP44, PLASTIC, TQFP-44
CY7C1011CV33-15AI CYPRESS

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128K x 16 Static RAM
CY7C1011CV33-15AIT CYPRESS

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Standard SRAM, 128KX16, 15ns, CMOS, PQFP44, PLASTIC, MS-026, TQFP-44