CY7C1009V33
CY7C109V33
128K x 8 Static RAM
memory expansion is provided by an active LOW Chip Enable
Features
(CE ), an active HIGH Chip Enable (CE ), an active LOW Out-
1
2
• High speed
put Enable (OE), and three-state drivers. Writing to the device
is accomplished by taking Chip Enable one (CE ) and Write
1
— t = 15, 20, 25ns
AA
Enable (WE) inputs LOW and Chip Enable two (CE ) input
2
• V = 3.3V ± 10%
CC
HIGH. Data on the eight I/O pins (I/O through I/O ) is then
0
7
• Low active power
— 432 mW (max.)
written into the location specified on the address pins (A
0
through A ).
16
Reading from the device is accomplished by taking Chip En-
able one (CE ) and Output Enable (OE) LOW while forcing
— 288 mW (L version)
• Low CMOS standby power
— 18 mW (max.)
1
Write Enable (WE) and Chip Enable two (CE ) HIGH. Under
2
these conditions, the contents of the memory location speci-
fied by the address pins will appear on the I/O pins.
— 7.2 mW (L version)
• 2.0V Data Retention
The eight input/output pins (I/O through I/O ) are placed in a
0
7
high-impedance state when the device is deselected (CE
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
1
HIGH or CE LOW), the outputs are disabled (OE HIGH), or
2
during a write operation (CE LOW, CE HIGH, and WE LOW).
1
2
• Easy memory expansion with CE , CE , and OE options
1
2
The CY7C109V33 is available in standard 32-pin,
400-mil-wide SOJ package. The CY7C1009V33 is available in
a 32-pin, 300-mil-wide SOJ package. The CY7C1009V33 and
CY7C109V33 are functionally equivalent in all other respects.
Functional Description
The CY7C109V33/CY7C1009V33 is a high-performance
CMOS static RAM organized as 131,072 words by 8 bits. Easy
Logic Block Diagram
Pin Configurations
SOJ
Top View
V
NC
32
31
30
1
CC
A
16
A
14
A
12
A
15
2
3
4
CE
2
29
28
WE
5
A
A
A
A
7
13
27
26
A
6
6
8
A
5
7
9
25
24
23
22
21
A
A
3
8
9
10
11
12
13
4
A
11
OE
I/O
0
A
A
10
2
INPUT BUFFER
A
1
CE
1
I/O
7
A
0
I/O
I/O
1
2
I/O
0
I/O
1
I/O
2
I/O
6
20
19
A
0
I/O
5
14
15
16
A
1
I/O
I/O
4
18
17
A
2
GND
3
A
4
109V33–2
32
3
A
A
A
A
I/O
I/O
I/O
1
2
OE
11
3
4
5
512 x 256 x 8
ARRAY
A
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
5
6
9
8
10
3
4
5
6
7
8
CE
A
A
13
I/O
7
A
7
8
WE
CE
2
I/O
6
I/O
5
A
A
15
I/O
TSOP I
4
3
V
I/O
Top View
CC
NC
9
GND
(not to scale)
A
16
I/O
2
10
11
12
13
14
15
16
I/O
I/O
6
7
I/O
1
A
12
POWER
DOWN
14
COLUMN
DECODER
A
I/O
A
0
0
CE
2
1
CE
A
A
6
A
A
7
A
1
WE
A
2
5
4
A
3
109V33–1
OE
109V33–3
Selection Guide
7C109V33-12 7C109V33-15 7C109V33-20 7C109V33-25
7C1009V33-12 7C1009V33-15 7C1009V33-20 7C1009V33-25
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Operating Current (mA) Low Power Version
Maximum CMOS Standby Current (mA) Standard
12
130
90
5
15
120
80
5
20
110
70
5
20
110
70
5
Maximum CMOS Standby Current (mA) Low Power Version
Shaded areas contain preliminary information.
2
2
2
2
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
September 3, 1999