5秒后页面跳转
CY7C1011CV33_06 PDF预览

CY7C1011CV33_06

更新时间: 2024-09-18 05:09:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
11页 366K
描述
2-Mbit (128K x 16) Static RAM

CY7C1011CV33_06 数据手册

 浏览型号CY7C1011CV33_06的Datasheet PDF文件第2页浏览型号CY7C1011CV33_06的Datasheet PDF文件第3页浏览型号CY7C1011CV33_06的Datasheet PDF文件第4页浏览型号CY7C1011CV33_06的Datasheet PDF文件第5页浏览型号CY7C1011CV33_06的Datasheet PDF文件第6页浏览型号CY7C1011CV33_06的Datasheet PDF文件第7页 
CY7C1011CV33  
2-Mbit (128K x 16) Static RAM  
Features  
Functional Description  
• Pin equivalent to CY7C1011BV33  
• High speed  
The CY7C1011CV33 is a high-performance CMOS Static  
RAM organized as 131,072 words by 16 bits.  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is  
written into the location specified on the address pins (A0  
through A16). If Byte High Enable (BHE) is LOW, then data  
from I/O pins (I/O8 through I/O15) is written into the location  
specified on the address pins (A0 through A16).  
— tAA = 10 ns  
• Low active power  
— 360 mW (max.)  
• Data Retention at 2.0  
• Automatic power-down when deselected  
• Independent control of upper and lower bits  
• Easy memory expansion with CE and OE features  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing the  
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,  
then data from the memory location specified by the address  
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is  
LOW, then data from memory will appear on I/O8 to I/O15. See  
the truth table at the back of this data sheet for a complete  
description of read and write modes.  
• Available in Pb-free and non Pb-free 44-pin TSOP II,  
44-pin TQFP and non Pb-free 48-ball VFBGA packages  
The input/output pins (I/O0 through I/O15) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE  
are disabled (BHE, BLE HIGH), or during a write operation (CE  
LOW, and WE LOW).  
The CY7C1011CV33 is available in a standard 44-pin TSOP  
II package with center power and ground pinout, a 44-pin Thin  
Plastic Quad Flatpack (TQFP), as well as a 48-ball fine-pitch  
ball grid array (VFBGA) package.  
Logic Block Diagram  
Pin Configuration  
TSOP II  
Top View  
INPUT BUFFER  
44  
1
A
4
A
5
A
0
43  
42  
41  
40  
39  
38  
A
A
2
3
4
5
6
3
6
A
1
A
A
2
7
A
2
OE  
A
1
I/O0–I/O7  
128K x 16  
ARRAY  
A
3
BHE  
BLE  
I/O  
I/O  
I/O  
A
0
A
4
CE  
A
I/O8–I/O15  
5
I/O  
7
0
15  
A
6
37  
36  
35  
34  
33  
I/O  
I/O  
8
1
2
14  
13  
12  
A
7
9
A
8
10  
11  
12  
13  
I/O  
V
SS  
I/O  
3
CC  
V
SS  
V
V
CC  
COLUMN  
DECODER  
32  
I/O  
I/O  
I/O  
4
5
6
7
11  
10  
31  
30  
29  
28  
I/O  
I/O  
I/O  
14  
15  
16  
I/O  
I/O  
9
8
WE 17  
NC  
A
18  
19  
20  
21  
22  
27  
26  
25  
16  
15  
A
BHE  
8
A
A
A
WE  
CE  
OE  
9
A
11  
14  
10  
A
A
12  
24  
23  
13  
BLE  
A
NC  
Cypress Semiconductor Corporation  
Document #: 38-05232 Rev. *E  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised October 6, 2006  
[+] Feedback  

与CY7C1011CV33_06相关器件

型号 品牌 获取价格 描述 数据表
CY7C1011CV33_08 CYPRESS

获取价格

2-Mbit (128K x 16) Static RAM
CY7C1011CV33_09 CYPRESS

获取价格

2-Mbit (128K x 16) Static RAM
CY7C1011CV33_10 CYPRESS

获取价格

2-Mbit (128K x 16) Static RAM
CY7C1011CV33_11 CYPRESS

获取价格

2-Mbit (128 K × 16) Static RAM 360 mW (max)
CY7C1011CV33_13 CYPRESS

获取价格

2-Mbit (128 K × 16) Static RAM
CY7C1011CV33-10BVC CYPRESS

获取价格

128K x 16 Static RAM
CY7C1011CV33-10BVI CYPRESS

获取价格

128K x 16 Static RAM
CY7C1011CV33-10ZC CYPRESS

获取价格

128K x 16 Static RAM
CY7C1011CV33-10ZCT CYPRESS

获取价格

Standard SRAM, 128KX16, 10ns, CMOS, PDSO44, TSOP2-44
CY7C1011CV33-10ZI CYPRESS

获取价格

128K x 16 Static RAM