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CY7C1006B

更新时间： 2024-09-16 22:03:19
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
10页 164K
描述
256K x 4 Static RAM

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CY7C1006B 数据手册

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1CY7C1006B  
CY7C106B  
CY7C1006B  
256K x 4 Static RAM  
Enable (CE), an active LOW Output Enable (OE), and  
three-state drivers. These devices have an automatic pow-  
er-down feature that reduces power consumption by more  
than 65% when the devices are deselected.  
Features  
• High speed  
— tAA = 12 ns  
• CMOS for optimum speed/power  
• Low active power  
Writing to the devices is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. Data on the four I/O  
pins (I/O0 through I/O3) is then written into the location speci-  
fied on the address pins (A0 through A17).  
— 495 mW  
• Low standby power  
— 275 mW  
Reading from the devices is accomplished by taking Chip En-  
able (CE) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH. Under these conditions, the contents of  
the memory location specified by the address pins will appear  
on the four I/O pins.  
• 2.0V data retention (optional)  
— 100 µW  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
The four input/output pins (I/O0 through I/O3) are placed in a  
high-impedance state when the devices are deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE and WE LOW).  
Functional Description  
The CY7C106B and CY7C1006B are high-performance  
CMOS static RAMs organized as 262,144 words by 4 bits.  
Easy memory expansion is provided by an active LOW Chip  
The CY7C106B is available in a standard 400-mil-wide SOJ;  
the CY7C1006B is available in a standard 300-mil-wide SOJ.  
Logic Block Diagram  
Pin Configuration  
SOJ  
Top View  
28  
27  
26  
1
2
3
4
5
6
A
V
CC  
0
A
A
17  
A
16  
A
15  
1
A
2
3
A
25  
24  
A
A
14  
A
13  
A
12  
4
23  
22  
A
5
A
7
8
9
10  
11  
12  
13  
6
A
21  
20  
19  
18  
17  
A
7
11  
INPUTBUFFER  
A
NC  
I/O  
8
A
9
3
2
1
A
1
A
10  
I/O  
I/O  
I/O  
A
A
3
I/O  
I/O  
I/O  
I/O  
CE  
OE  
GND  
2
3
2
1
0
16  
15  
0
14  
WE  
A
4
A
5
512 x 512 x 4  
ARRAY  
C106B–2  
A
6
A
7
A
8
A
9
POWER  
DOWN  
COLUMN  
DECODER  
CE  
WE  
OE  
C106B–1  
Selection Guide  
7C106B-12  
7C1006B-12  
7C106B-15  
7C1006B-15  
7C106B-20  
7C1006B-20  
7C106B-25  
7C1006B-25  
7C106B-35  
Maximum Access Time (ns)  
12  
90  
15  
80  
20  
75  
25  
70  
35  
60  
Maximum Operating  
Current (mA)  
Maximum Standby  
Current (mA)  
50  
30  
30  
30  
25  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
•
408-943-2600  
Document #: 38-05037 Rev. **  
Revised August 24, 2001  
1234567...10

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CY7C1006B-12VC CYPRESS

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 		256K x 4 Static RAM
CY7C1006B-12VCT CYPRESS

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 		Standard SRAM, 256KX4, 12ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
CY7C1006B-15VC ROCHESTER

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 		256KX4 STANDARD SRAM, 15ns, PDSO28, 0.300 INCH, SOJ-28
CY7C1006B-15VC CYPRESS

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CY7C1006B-15VCT CYPRESS

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 		Standard SRAM, 256KX4, 15ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
CY7C1006B-15VCT ROCHESTER

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 		256KX4 STANDARD SRAM, 15ns, PDSO28, 0.300 INCH, SOJ-28
CY7C1006B-15VI CYPRESS

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 		256K x 4 Static RAM
CY7C1006B-15VIT CYPRESS

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 		Standard SRAM, 256KX4, 15ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
CY7C1006B-15VXCT CYPRESS

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 		Standard SRAM, 256KX4, 15ns, CMOS, PDSO28, 0.300 INCH, LEAD FREE, SOJ-28
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 		256K x 4 Static RAM

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