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CY62137FV30LL-55ZSXE PDF预览

CY62137FV30LL-55ZSXE

更新时间: 2024-11-20 03:08:51
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
12页 512K
描述
2-Mbit (128K x 16) Static RAM

CY62137FV30LL-55ZSXE 数据手册

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CY62137FV30 MoBL®  
2-Mbit (128K x 16) Static RAM  
is ideal for providing More Battery Life™ (MoBL®) in portable  
applications such as cellular telephones. The device also has an  
automatic power down feature that significantly reduces power  
consumption by 90% when addresses are not toggling. Placing  
the device into standby mode reduces power consumption by  
more than 99% when deselected (CE HIGH or both BLE and  
BHE are HIGH). The input and output pins (IO0 through IO15) are  
placed in a high impedance state in the following conditions:  
Features  
Very high speed: 45 ns  
Temperature ranges  
Industrial: –40°C to +85°C  
Automotive-A: –40°C to +85°C  
Automotive-E: –40°C to +125°C  
Wide voltage range: 2.20V–3.60V  
Deselected (CE HIGH)  
Pin compatible with CY62137CV/CV25/CV30/CV33,  
Outputs are disabled (OE HIGH)  
CY62137V, and CY62137EV30  
Both Byte High Enable and Byte Low Enable are disabled  
Ultra low standby power  
(BHE, BLE HIGH)  
Typical standby current: 1 µA  
Maximum standby current: 5 µA (Industrial)  
Ultra low active power  
Write operation is active (CE LOW and WE LOW)  
Write to the device by taking Chip Enable (CE) and Write Enable  
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data  
from IO pins (IO0 through IO7) is written into the location  
specified on the address pins (A0 through A16). If Byte High  
Enable (BHE) is LOW, then data from IO pins (IO8 through IO15  
is written into the location specified on the address pins (A0  
Typical active current: 1.6 mA at f = 1 MHz (45 ns speed)  
Easy memory expansion with CE and OE features  
)
Automatic power down when deselected  
CMOS for optimum speed and power  
Byte power down feature  
through A16).  
Read from the device by taking Chip Enable (CE) and Output  
Enable (OE) LOW, while forcing the Write Enable (WE) HIGH. If  
Byte Low Enable (BLE) is LOW, then data from the memory  
location specified by the address pins appear on IO0 to IO7. If  
Byte High Enable (BHE) is LOW, then data from memory  
appears on IO8 to IO15. See the “Truth Table” on page 9 for a  
complete description of read and write modes.  
Available in Pb-free 48-Ball VFBGA and 44-pin TSOP II  
package  
Functional Description  
The CY62137FV30 is a high performance CMOS static RAM  
organized as 128K words by 16 bits. This device features  
advanced circuit design to provide ultra low active current. This  
For best practice recommendations, refer to the Cypress  
application note AN1064, SRAM System Guidelines.  
Logic Block Diagram  
DATA IN DRIVERS  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
128K x 16  
RAM Array  
IO0–IO7  
IO8–IO15  
BHE  
WE  
CE  
COLUMN DECODER  
CE  
POWER DOWN  
CIRCUIT  
OE  
BLE  
BHE  
BLE  
Cypress Semiconductor Corporation  
Document Number: 001-07141 Rev. *E  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised August 03, 2007  

CY62137FV30LL-55ZSXE 替代型号

型号 品牌 替代类型 描述 数据表
CY62137FV30LL-55ZSXET CYPRESS

完全替代

Standard SRAM, 128KX16, 55ns, CMOS, PDSO44, LEAD FREE, TSOP2-44

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