Datasheet > CY62137VN

CY62137VN

更新时间： 2024-11-24 04:53:23

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
11页	468K
描述
2-Mbit (128K x 16) Static RAM

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CY62137VN 数据手册

CY62137VN MoBL^®

2-Mbit (128K x 16) Static RAM

portable applications such as cellular telephones. The device

also has an automatic power-down feature that reduces power

consumption by 99% when addresses are not toggling. The

device can also be put into standby mode when deselected

(CE HIGH) or when CE is LOW and both BLE and BHE are

HIGH. The input/output pins (I/O₀through I/O₁₅) are placed in

a high-impedance state when: deselected (CE HIGH), outputs

are disabled (OE HIGH), BHE and BLE are disabled (BHE,

BLE HIGH), or during a write operation (CE LOW, and WE

LOW).Writing to the device is accomplished by taking Chip

Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low

Enable (BLE) is LOW, then data from I/O pins (I/O₀through

I/O₇), is written into the location specified on the address pins

(A₀through A₁₆). If Byte High Enable (BHE) is LOW, then data

from I/O pins (I/O₈through I/O₁₅) is written into the location

specified on the address pins (A₀through A₁₆).Reading from

the device is accomplished by taking Chip Enable (CE) and

Output Enable (OE) LOW while forcing the Write Enable (WE)

HIGH. If Byte Low Enable (BLE) is LOW, then data from the

memory location specified by the address pins will appear on

I/O₀to I/O₇. If Byte High Enable (BHE) is LOW, then data from

memory will appear on I/O₈to I/O₁₅. See the truth table at the

back of this data sheet for a complete description of read and

write modes.

Features

• Temperature Ranges

— Industrial: –40°C to 85°C

— Automotive-A: –40°C to 85°C

— Automotive-E: –40°C to 125°C

• High Speed: 55 ns

• Wide voltage range: 2.7V–3.6V

• Ultra-low active, standby power

• Easy memory expansion with CE and OE features

• TTL-compatible inputs and outputs

• Automatic power-down when deselected

• CMOS for optimum speed/power

• Available in Pb-free 44-pin TSOP Type II package

Functional Description^[1]

The CY62137VN is a high-performance CMOS static RAM

organized as 128K words by 16 bits. This device features

advanced circuit design to provide ultra-low active current.

This is ideal for providing More Battery Life™ (MoBL^®) in

Logic Block Diagram

DATA IN DRIVERS

A₁₀

A₉

A₈

A₇

A₆

A₅

A₄

A₃

A₂

128K x 16

RAM Array

I/O₀–I/O₇

I/O₈–I/O₁₅

A₁

A₀

COLUMN DECODER

BHE

BLE

Power-down

Circuit

BHE

BLE

Note:

1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

Cypress Semiconductor Corporation

Document #: 001-06497 Rev. *A

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised August 3, 2006

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与CY62137VN相关器件

型号	品牌	获取价格	描述	数据表
CY62137VNLL-55ZXI	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62137VNLL-70ZSXA	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62137VNLL-70ZSXE	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62137VNLL-70ZXI	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62137VNLL-70ZXIT	CYPRESS	获取价格	Standard SRAM, 128KX16, 70ns, CMOS, PDSO44, LEAD FREE, TSOP2-44
CY62137VSL-55ZI	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62137VSL-70ZI	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62138CV	ETC	获取价格	Memory
CY62138CV25	CYPRESS	获取价格	2M (256K x 8) Static RAM
CY62138CV25LL-55BAI	CYPRESS	获取价格	2M (256K x 8) Static RAM

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