Datasheet > CXT5551ETRPBFREE

CXT5551ETRPBFREE

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	291K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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CXT5551ETRPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	120
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	1.2 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz

CXT5551ETRPBFREE 数据手册

CXT5551E

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT5551E is an

NPN Silicon Transistor, packaged in an SOT-89 case,

designed for general purpose amplifier applications

requiring high breakdown voltage.

MARKING: FULL PART NUMBER

FEATURES:

• High Collector Breakdown Voltage: 250V

• Low Leakage Current: 50nA MAX

• Low Saturation Voltage: 100mV MAX @ 50mA

• Complementary Device: CXT5401E

• SOT-89 Surface Mount Package

SOT-89 CASE

APPLICATIONS:

• General purpose switching and amplification

• Telephone applications

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

♦ ^{Collector-Base Voltage}

250

220

CBO

♦

Collector-Emitter Voltage

CEO

Emitter-Base Voltage

6.0

EBO

Continuous Collector Current

Power Dissipation

600

1.2

Operating and Storage Junction Temperature

Thermal Resistance

-65 to +150

104

°C

J, stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

μA

=120V

CBO

EBO

=120V, T =100°C

=4.0V

♦ ^BV

I =100µA

250

220

6.0

CBO

CEO

EBO

♦

I =1.0mA

I =10μA

I =10mA, I =1.0mA

♦

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

100

1.00

♦

I =10mA, I =1.0mA

I =50mA, I =5.0mA

♦ Enhanced specification

R1 (23-February 2010)

中文翻译

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