生命周期: | Active | 包装说明: | PLASTIC PACKAGE-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.18 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 160 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 1.2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CXT5551HCBKLEADFREE | CENTRAL |
获取价格 |
Transistor | |
CXT5551HCBKPBFREE | CENTRAL |
获取价格 |
暂无描述 | |
CXT5551HCTR | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
CXT5551HCTRLEADFREE | CENTRAL |
获取价格 |
暂无描述 | |
CXT5551LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
CXT5551PBFREE | CENTRAL |
获取价格 |
暂无描述 | |
CXT5551-TP | MCC |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C | |
CXT5551TR | CENTRAL |
获取价格 |
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
CXT5551TR13LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
CXT5551TRLEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy |