CXT5551HCBKPBFREE

更新时间： 2024-01-13 17:28:34

品牌	Logo	应用领域
CENTRAL		晶体晶体管功率双极晶体管放大器
页数	文件大小	规格书
2页	104K
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CXT5551HCBKPBFREE 数据手册

Central

CXT5551

Semiconductor Corp.

SURFACE MOUNT

NPN SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT5551

type is an NPN silicon transistor manufactured by

the epitaxial planar process, epoxy molded in a

surface mount package, designed for high

voltage amplifier applications.

SOT-89 CASE

MAXIMUM RATINGS (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

180

160

CBO

CEO

EBO

6.0

600

Power Dissipation

1.2

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

J stg

-65 to +150

104

°C

°C/W

ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

µA

=120V

CBO

EBO

=120V, T =100°C

=4.0V

I =100µA

180

160

6.0

CBO

CEO

I =1.0mA

I =10µA

EBO

I =10mA, I =1.0mA

0.15

0.20

1.00

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

250

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

100

300

6.0

200

MHz

=10V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

=5.0V, I =200µA, R =10Ω

C S

f=10Hz to 15.7kHz

8.0

R3 ( 20-December 2001)

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