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CXT7820BK PDF预览

CXT7820BK

更新时间: 2024-01-27 04:15:16
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 502K
描述
Transistor

CXT7820BK 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.69
最大集电极电流 (IC):1 A配置:Single
最小直流电流增益 (hFE):100JESD-609代码:e0
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):1.2 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):150 MHzBase Number Matches:1

CXT7820BK 数据手册

 浏览型号CXT7820BK的Datasheet PDF文件第2页 
TM  
CXT7820  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
VERY LOW V  
CE(SAT)  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CXT7820 is a  
very low V PNP transistor designed for  
PNP SILICON TRANSISTOR  
CE(SAT)  
applications where electrical and thermal efficiency  
are prime requirements. Packaged in an industry  
standard SOT-89 case, this device brings updated  
electrical specifications and characteristics suitable  
for the most demanding designs.  
TM  
POWER  
89  
MARKING: FULL PART NUMBER  
SOT-89 CASE  
FEATURES:  
APPLICATIONS:  
DC/DC Converters  
Device is Halogen Free by design  
High Current (I =1.0A)  
Voltage Clamping  
Protection Circuits  
Battery powered Cell Phones, Pagers,  
Digital Cameras, PDAs, Laptops, etc.  
C
V
=0.34V MAX @  
I =1.0A  
C
CE(SAT)  
SOT-89 surface mount package  
Complementary NPN device CXT3820  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
V
V
A
A
mA  
W
°C  
°C/W  
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
V
V
V
80  
60  
5.0  
1.0  
2.0  
CBO  
CEO  
EBO  
I
C
I
CM  
I
P
300  
1.2  
-65 to +150  
104  
B
D
T , T  
J
stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
UNITS  
I
V
V
=60V  
=5.0V  
nA  
nA  
V
V
V
V
V
V
V
CBO  
CB  
EB  
I
EBO  
BV  
I =100μA  
80  
60  
5.0  
CBO  
CEO  
EBO  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
C
BV  
BV  
V
V
V
V
V
I =10mA  
C
I =100μA  
E
I =100mA, I =1.0mA  
0.175  
0.18  
0.34  
1.1  
C
B
B
I =500mA, I =50mA  
C
I =1.0A, I =100mA  
C
B
B
I =1.0A, I =50mA  
C
V
=5.0V, I =1.0A  
C
0.9  
V
CE  
CE  
CE  
CE  
CE  
CB  
h
V
V
V
V
V
=5.0V, I =1.0mA  
C
200  
150  
100  
150  
FE  
h
=5.0V, I =500mA  
C
FE  
FE  
h
=5.0V, I =1.0A  
C
f
=10V, I =50mA  
C
=10V, I =0, f=1.0MHz  
E
MHz  
pF  
T
C
15  
ob  
R0 (21-April 2009)