Datasheet > CXT953

CXT953

更新时间： 2024-01-17 16:33:00

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	90K
描述
SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR

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中文翻译

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技术参数
数据手册

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CXT953 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	5 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	1.2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

CXT953 数据手册

Central

CXT953

Semiconductor Corp.

SURFACE MOUNT

HIGH CURRENT

SILICON PNP TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT953 type is a

high current, high voltage silicon PNP transistor.

Packaged in the SOT-89 surface mount case, the

CXT953 is ideal for industrial and consumer

applications requiring high energy efficiency in a small

package.

MARKING CODE: FULL PART NUMBER

NPN complement: CXT853

SOT-89 CASE

FEATURES:

• Low Saturation Voltage:

= 0.420V Max @ I = 4.0A

APPLICATIONS:

• Power Management

• DC/DC Converters

• Motor Driving

• Switching

CE(SAT)

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

140

100

6.0

5.0

1.2

CBO

CEO

EBO

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

104

°C

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=100V

1.0

μA

CBO

=100V, T =100°C

=100V, R

CBO

≤ 1kΩ

CER

=6.0V

EBO

I =100μA

140

100

6.0

170

150

120

9.0

CBO

I =10mA, R

≤ 1kΩ

CER

I =10mA

CEO

I =100μA

EBO

I =100mA, I =10mA

CE(SAT)

I =1.0A, I =100mA

120

220

420

1.2

CE(SAT)

I =2.0A, I =200mA

170

320

1.0

CE(SAT)

I =4.0A, I =400mA

CE(SAT)

C B

I =4.0A, I =400mA

C B

BE(SAT)

R0 (1-February 2006)

中文翻译

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