Datasheet > CXT853LEADFREE

CXT853LEADFREE

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	286K
描述
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, SOT-89, 3 PIN

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CXT853LEADFREE 数据手册

CXT853

www.centralsemi.com

SURFACE MOUNT

HIGH CURRENT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT853 type is

a high current, high voltage silicon NPN transistor.

Packaged in the SOT-89 surface mount case,

the CXT853 is ideal for industrial and consumer

applications requiring high energy efficiency in a small

package.

MARKING: FULL PART NUMBER

SOT-89 CASE

FEATURES:

• Low Saturation Voltage:

APPLICATIONS:

• Power Management

• DC/DC Converters

=0.340V MAX @ I =5.0A

CE(SAT)

• Motor Driving

• Switching

• PNP Complement: CXT953

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

200

100

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Power Dissipation

6.0

1.2

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

104

°C

°C/W

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

=150V

1.0

CBO

CER

EBO

=150V, T =100°C

=150V, R ≤1.0kΩ

=6.0V

I =100μA

200

100

6.0

220

210

110

8.0

CBO

I =10mA, R ≤1.0kΩ

CER

I =10mA

CEO

I =100μA

EBO

I =100mA, I =5mA

CE(SAT)

BE(SAT)

I =2.0A, I =100mA

135

170

340

1.25

I =5.0A, I =500mA

R1 (23-February 2010)

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