Datasheet > CXT7820BKLEADFREE

CXT7820BKLEADFREE

更新时间： 2024-09-24 20:40:43

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	502K
描述
Transistor

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中文翻译

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技术参数
数据手册

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CXT7820BKLEADFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	1 A
配置：	Single	最小直流电流增益 (hFE)：	100
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1.2 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn)
标称过渡频率 (fT)：	150 MHz	Base Number Matches：	1

CXT7820BKLEADFREE 数据手册

CXT7820

Central

Semiconductor Corp.

SURFACE MOUNT

VERY LOW V

CE(SAT)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT7820 is a

very low V PNP transistor designed for

PNP SILICON TRANSISTOR

CE(SAT)

applications where electrical and thermal efficiency

are prime requirements. Packaged in an industry

standard SOT-89 case, this device brings updated

electrical specifications and characteristics suitable

for the most demanding designs.

POWER

MARKING: FULL PART NUMBER

SOT-89 CASE

FEATURES:

APPLICATIONS:

• DC/DC Converters

Device is Halogen Free by design

•

• High Current (I =1.0A)

Voltage Clamping

Protection Circuits

Battery powered Cell Phones, Pagers,

Digital Cameras, PDAs, Laptops, etc.

•

=0.34V MAX @

I =1.0A

•

CE(SAT)

SOT-89 surface mount package

Complementary NPN device CXT3820

•

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

°C

°C/W

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

5.0

1.0

2.0

CBO

CEO

EBO

300

1.2

-65 to +150

104

T , T

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

100

UNITS

=60V

=5.0V

CBO

EBO

I =100μA

5.0

CBO

CEO

EBO

CE(SAT)

BE(SAT)

BE(ON)

I =10mA

I =100μA

I =100mA, I =1.0mA

0.175

0.18

0.34

1.1

I =500mA, I =50mA

I =1.0A, I =100mA

I =1.0A, I =50mA

=5.0V, I =1.0A

0.9

=5.0V, I =1.0mA

200

150

100

150

=5.0V, I =500mA

=5.0V, I =1.0A

=10V, I =50mA

=10V, I =0, f=1.0MHz

MHz

R0 (21-April 2009)

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