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CXT7820TR13 PDF预览

CXT7820TR13

更新时间: 2023-01-02 22:56:54
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 356K
描述
Transistor

CXT7820TR13 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):1 A配置:Single
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):1.2 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):150 MHzBase Number Matches:1

CXT7820TR13 数据手册

 浏览型号CXT7820TR13的Datasheet PDF文件第2页 
CXT7820  
www.centralsemi.com  
SURFACE MOUNT  
VERY LOW V  
CE(SAT)  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CXT7820 is a  
very low V PNP transistor designed for  
PNP SILICON TRANSISTOR  
CE(SAT)  
applications where electrical and thermal efficiency  
are prime requirements. Packaged in an industry  
standard SOT-89 case, this device brings updated  
electrical specifications and characteristics suitable for  
the most demanding designs.  
MARKING: FULL PART NUMBER  
SOT-89 CASE  
• Device is Halogen Free by design  
APPLICATIONS:  
FEATURES:  
DC/DC Converters  
High Current (I =1.0A)  
C
Voltage Clamping  
Protection Circuits  
V  
=0.34V MAX @  
I =1.0A  
C
CE(SAT)  
SOT-89 surface mount package  
Battery powered Cell Phones, Pagers,  
Digital Cameras, PDAs, Laptops, etc.  
Complementary NPN device: CXT3820  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
SYMBOL  
UNITS  
V
V
V
A
A
mA  
W
°C  
°C/W  
A
V
V
V
80  
60  
5.0  
1.0  
2.0  
CBO  
CEO  
EBO  
C
CM  
I
I
I
P
300  
1.2  
-65 to +150  
104  
B
D
T
T
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
UNITS  
I
I
V
V
=60V  
=5.0V  
nA  
nA  
V
V
V
V
V
V
V
CBO  
EBO  
CB  
EB  
BV  
BV  
BV  
I =100µA  
80  
60  
5.0  
CBO  
CEO  
EBO  
C
I =10mA  
C
I =100µA  
E
V
V
V
V
V
I =100mA, I =1.0mA  
I =500mA, I =50mA  
0.175  
0.18  
0.34  
1.1  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
C
C
B
I =1.0A, I =100mA  
B
I =1.0A, I =50mA  
C
B
V
=5.0V, I =1.0A  
0.9  
V
CE  
CE  
CE  
CE  
CE  
CB  
C
h
h
h
V
V
V
V
V
=5.0V, I =1.0mA  
=5.0V, I =500mA  
200  
150  
100  
150  
C
C
FE  
FE  
=5.0V, I =1.0A  
C
f
=10V, I =50mA  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
15  
ob  
E
R1 (23-February 2010)  

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