CXT7820
www.centralsemi.com
SURFACE MOUNT
VERY LOW V
CE(SAT)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT7820 is a
very low V PNP transistor designed for
PNP SILICON TRANSISTOR
CE(SAT)
applications where electrical and thermal efficiency
are prime requirements. Packaged in an industry
standard SOT-89 case, this device brings updated
electrical specifications and characteristics suitable for
the most demanding designs.
MARKING: FULL PART NUMBER
SOT-89 CASE
• Device is Halogen Free by design
APPLICATIONS:
FEATURES:
•
DC/DC Converters
•
High Current (I =1.0A)
C
• Voltage Clamping
• Protection Circuits
• V
=0.34V MAX @
I =1.0A
C
CE(SAT)
• SOT-89 surface mount package
• Battery powered Cell Phones, Pagers,
Digital Cameras, PDAs, Laptops, etc.
• Complementary NPN device: CXT3820
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
UNITS
V
V
V
A
A
mA
W
°C
°C/W
A
V
V
V
80
60
5.0
1.0
2.0
CBO
CEO
EBO
C
CM
I
I
I
P
300
1.2
-65 to +150
104
B
D
T
T
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
100
100
UNITS
I
I
V
V
=60V
=5.0V
nA
nA
V
V
V
V
V
V
V
CBO
EBO
CB
EB
BV
BV
BV
I =100µA
80
60
5.0
CBO
CEO
EBO
C
I =10mA
C
I =100µA
E
V
V
V
V
V
I =100mA, I =1.0mA
I =500mA, I =50mA
0.175
0.18
0.34
1.1
CE(SAT)
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
FE
C
B
C
C
B
I =1.0A, I =100mA
B
I =1.0A, I =50mA
C
B
V
=5.0V, I =1.0A
0.9
V
CE
CE
CE
CE
CE
CB
C
h
h
h
V
V
V
V
V
=5.0V, I =1.0mA
=5.0V, I =500mA
200
150
100
150
C
C
FE
FE
=5.0V, I =1.0A
C
f
=10V, I =50mA
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
15
ob
E
R1 (23-February 2010)