Datasheet > CXT5551HC_10

CXT5551HC_10

更新时间： 2024-01-04 19:16:44

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	284K
描述
SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR

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数据手册

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CXT5551HC_10 数据手册

CXT5551HC

www.centralsemi.com

SURFACE MOUNT

HIGH CURRENT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXT5551HC type

is an high current NPN silicon transistor manufactured

by the epitaxial planar process, epoxy molded in a

surface mount package, designed for high voltage and

high current amplifier applications.

MARKING: FULL PART NUMBER

SOT-89 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

180

160

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Power Dissipation

1.0

1.2

Operating and Storage Junction Temperature

Thermal Resistance

-65 to +150

104

°C

°C/W

J, stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

µA

=120V

CBO

EBO

=120V, T =100°C

=4.0V

I =100µA

180

160

6.0

CBO

CEO

I =1.0mA

I =10µA

EBO

I =10mA, I =1.0mA

0.15

0.20

1.00

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

250

=5.0V, I =50mA

=10V, I =1.0A

=10V, I =10mA, f=100MHz

100

MHz

=10V, I =0, f=1.0MHz

R1 (23-February 2010)

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