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CXK77P36R80GB-33 PDF预览

CXK77P36R80GB-33

更新时间： 2024-11-08 21:16:43
品牌 Logo 应用领域
索尼 - SONY 静态存储器内存集成电路
页数 文件大小 规格书
25页 245K
描述
Late-Write SRAM, 256KX36, 1.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119

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中文翻译

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CXK77P36R80GB-33 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：BGA, BGA119,7X17,50针数：119
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.92
最长访问时间：1.7 nsI/O 类型：COMMON
JESD-30 代码：R-PBGA-B119JESD-609代码：e0
长度：22 mm内存密度：9437184 bit
内存集成电路类型：LATE-WRITE SRAM内存宽度：36
功能数量：1端子数量：119
字数：262144 words字数代码：256000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：组织：256KX36
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：BGA封装等效代码：BGA119,7X17,50
封装形状：RECTANGULAR封装形式：GRID ARRAY
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：1.5/1.8,3.3 V认证状态：Not Qualified
座面最大高度：2.4 mm最大待机电流：0.1 A
最小待机电流：3.14 V子类别：SRAMs
最大压摆率：0.74 mA最大供电电压 (Vsup)：3.47 V
最小供电电压 (Vsup)：3.13 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子面层：TIN LEAD
端子形式：BALL端子节距：1.27 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：10
宽度：14 mmBase Number Matches：1

CXK77P36R80GB-33 数据手册

 浏览型号CXK77P36R80GB-33的Datasheet PDF文件第2页浏览型号CXK77P36R80GB-33的Datasheet PDF文件第3页浏览型号CXK77P36R80GB-33的Datasheet PDF文件第4页浏览型号CXK77P36R80GB-33的Datasheet PDF文件第5页浏览型号CXK77P36R80GB-33的Datasheet PDF文件第6页浏览型号CXK77P36R80GB-33的Datasheet PDF文件第7页 
SONYÒ  
CXK77P36R80GB  
33/37/4  
8Mb LW R-R HSTL High Speed Synchronous SRAM (256K x 36)  
Preliminary  
Description  
The CXK77P36R80GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 262,144 words  
by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer  
onto a single monolithic IC. Register - Register (R-R) read operations and Late Write (LW) write operations are supported, pro-  
viding a high-performance user interface.  
All address and control input signals except G (Output Enable) and ZZ (Sleep Mode) are registered on the rising edge of K  
(Input Clock).  
During read operations, output data is driven valid from the rising edge of K, one full clock cycle after the address is registered.  
During write operations, input data is registered on the rising edge of K, one full clock cycle after the address is registered.  
The output drivers are series terminated, and the output impedance is programmable through an external impedance matching  
resistor RQ. By connecting RQ between ZQ and V , the output impedance of all DQ pins can be precisely controlled.  
SS  
Sleep (power down) mode control is provided through the asynchronous ZZ input. 300 MHz operation is obtained from a single  
3.3V power supply. JTAG boundary scan interface is provided using a subset of IEEE standard 1149.1 protocol.  
Features  
•
3 Speed Bins  
-33  
Cycle Time / Access Time  
3.3ns / 1.7ns  
-37  
3.7ns / 1.9ns  
-4 (-4A)  
4.0ns / 2.0ns (1.8ns)  
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Single 3.3V power supply (V ): 3.3V ± 5%  
DD  
Dedicated output supply voltage (V  
): 1.5V to 1.95V typical  
DDQ  
HSTL-compatible I/O interface with dedicated input reference voltage (V ): V  
/2 typical  
DDQ  
REF  
Register - Register (R-R) read operations  
Late Write (LW) write operations  
Full read/write coherency  
Byte Write capability  
Two cycle deselect  
Differential input clocks (K/K)  
Asynchronous output enable (G)  
Programmable impedance output drivers  
Sleep (power down) mode via dedicated mode pin (ZZ)  
JTAG boundary scan (subset of IEEE standard 1149.1)  
119 pin (7x17), 1.27mm pitch, 14mm x 22mm Ball Grid Array (BGA) package  
8Mb LW R-R, rev 1.2  
1 / 25  
January 10, 2002  
1234567...25

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与CXK77P36R80GB-33相关器件

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CXK77Q18162AGB-25 SONY

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 		DDR SRAM, 1MX18, 2ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
CXK77Q18162AGB-3 SONY

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 		DDR SRAM, 1MX18, 2ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
CXK77Q18162AGB-3A SONY

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 		DDR SRAM, 1MX18, 2ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
CXK77Q18162GB-25 SONY

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 		DDR SRAM, 1MX18, 1.8ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
CXK77Q18162GB-27 SONY

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 		DDR SRAM, 1MX18, 1.9ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
CXK77Q18B80AGB ETC

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 		MEMORY-UHS Synch SRAMs 8Meg Ultra-High-Speed Synchronous SRAM (512K x 18) (28 pages 315K R
CXK77Q18B80AGB-28 SONY

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 		Late-Write SRAM, 512KX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-11
CXK77Q18B80AGB-4 SONY

获取价格

 		Late-Write SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119
CXK77Q18B80AGB-4A SONY

获取价格

 		Late-Write SRAM, 512KX18, 1.8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-11
CXK77Q18R160GB ETC

获取价格

 		MEMORY-UHS Synch SRAMS 16Meg Ultra-High-Speed Synchronous SRAM (1M x 18) (23 pages 161K Re

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