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CUS04(TE85R,Q)

更新时间： 2024-09-14 20:00:31
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
5页 169K
描述
Diode Schottky 60V 0.7A 2-Pin US-FLAT T/R

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中文翻译

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CUS04(TE85R,Q) 技术参数

生命周期：Active包装说明：R-PDSO-F2
Reach Compliance Code：unknownFactory Lead Time：12 weeks
风险等级：5.71应用：GENERAL PURPOSE
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.58 VJESD-30 代码：R-PDSO-F2
最大非重复峰值正向电流：20 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-40 °C
最大输出电流：0.7 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
最大重复峰值反向电压：60 V最大反向电流：100 µA
反向测试电压：60 V表面贴装：YES
技术：SCHOTTKY端子形式：FLAT
端子位置：DUALBase Number Matches：1

CUS04(TE85R,Q) 数据手册

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CUS04  
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type  
CUS04  
Switching Mode Power Supply Applications  
Unit: mm  
Portable Equipment Battery Applications  
+ 0.2  
− 0.1  
1.25  
+ 0.05  
0.13  
0.88 ± 0.1  
− 0.03  
•
•
•
•
Forward voltage: V  
= 0.58 V@I = 0.7 A  
FM F  
②
Average forward current: I  
= 0.7 A  
F (AV)  
Repetitive peak reverse voltage: V  
= 60 V  
RRM  
Suitable for high-density board assembly due to the use of a small  
surface-mount package, US−FLATTM  
①
Absolute Maximum Ratings (Ta = 25°C)  
0.6 ± 0.1  
Characteristics  
Symbol  
Rating  
Unit  
V
0.88 ± 0.1  
Repetitive peak reverse voltage  
V
60  
RRM  
0.6 ± 0.1  
0.7  
(Note 1)  
Average forward current  
I
A
A
F (AV)  
Peak one cycle surge forward current  
(Non-repetitive)  
I
20 (50 Hz)  
FSM  
0.78 ± 0.1  
① ANODE  
Junction temperature  
T
j
−40 to 150  
−40 to 150  
°C  
°C  
② CATHODE  
Storage temperature range  
T
stg  
0.6 ± 0.1  
JEDEC  
―
―
Note 1: Ta = 27°C: Device mounted on a glass-epoxy board  
Board size: 50 mm × 50 mm,  
JEITA  
Land size: 6 mm × 6 mm  
TOSHIBA  
3-2B1A  
Rectangular waveform (α = 180°), V = 30 V  
R
Note 2: Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
Weight: 0.004 g (typ.)  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= 0.1 A  
= 0.7 A  
―
―
―
―
―
0.40  
0.55  
0.3  
―
0.58  
―
FM (1)  
FM (2)  
FM  
FM  
Peak forward voltage  
I
V
V
V
= 5 V  
RRM (1)  
RRM (2)  
RRM  
RRM  
Repetitive peak reverse current  
Junction capacitance  
μA  
I
= 60 V  
3.0  
100  
―
C
= 10 V, f = 1.0 MHz  
R
38  
pF  
j
Device mounted on a ceramic board  
(board size: 50 mm × 50 mm)  
(soldering land: 2 mm × 2 mm)  
(board thickness: 0.64 mm)  
―
―
75  
Thermal resistance  
(junction to ambient)  
R
°C/W  
th (j-a)  
Device mounted on a glass-epoxy board  
(board size: 50 mm × 50 mm)  
(soldering land: 6 mm × 6 mm)  
(board thickness: 1.6 mm)  
―
―
―
―
150  
30  
Thermal resistance (junction to lead)  
R
Junction to lead of cathode side  
°C/W  
th (j-ℓ)  
1
2008-05-13  
12345

中文翻译

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