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CUS08F30 PDF预览

CUS08F30

更新时间: 2024-11-05 12:50:55
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
5页 127K
描述
High-Speed Switching

CUS08F30 数据手册

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CUS08F30  
Schottky Barrier Diode Silicon Epitaxial  
CUS08F30  
1. Applications  
High-Speed Switching  
2. Features  
(1) Low forward voltage: VF(3) = 0.40 V (typ.)  
(2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages.  
3. Packaging and Internal Circuit  
1: Cathode  
2: Anode  
USC  
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)  
Characteristics  
Symbol  
Note  
Rating  
Unit  
Reverse voltage  
VR  
IO  
(Note 1)  
(Note 2)  
30  
800  
V
mA  
A
Average rectified current  
Non-repetitive peak forward surge current  
Junction temperature  
IFSM  
Tj  
5
125  
Storage temperature  
Tstg  
-55 to 125  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on a ceramic circuit board of 25 mm × 25 mm, Pad dimension of 2 mm × 2 mm.  
Note 2: Measured with a 10 ms pulse.  
2012-06-12  
Rev.4.0  
1

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