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CUS05S30,H3F(T PDF预览

CUS05S30,H3F(T

更新时间: 2024-09-14 14:41:35
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
5页 144K
描述
Rectifier Diode

CUS05S30,H3F(T 技术参数

生命周期:Active包装说明:R-PDSO-G2
Reach Compliance Code:unknown风险等级:5.71
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.47 VJESD-30 代码:R-PDSO-G2
最大非重复峰值正向电流:5 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:30 V
最大反向电流:300 µA反向测试电压:30 V
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

CUS05S30,H3F(T 数据手册

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CUS05S30  
Schottky Barrier Diode Silicon Epitaxial  
CUS05S30  
1. Applications  
High-Speed Switching  
2. Packaging and Internal Circuit  
1: Cathode  
2: Anode  
USC  
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )  
Characteristics  
Symbol  
Note  
Rating  
Unit  
V
Peak reverse voltage  
Reverse voltage  
VRM  
VR  
30  
20  
0.5  
Average rectified current  
Non-repetitive peak forward surge current  
Junction temperature  
IO  
(Note 1)  
(Note 2)  
A
IFSM  
Tj  
5
125  
Storage temperature  
Tstg  
-55 to 125  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Mounted on an FR4 board.  
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)  
Note 2: Measured with a 10 ms pulse.  
Start of commercial production  
2013-09  
2014-04-07  
Rev.3.0  
1

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