Datasheet > CUS05F30(TPH3,F)

CUS05F30(TPH3,F)

更新时间： 2024-09-15 07:02:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	176K
描述
RECTIFIER DIODE,SCHOTTKY,30V V(RRM),SOD-323

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CUS05F30(TPH3,F) 数据手册

CUS05F30

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

CUS05F30

High-Speed Switching Application

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Reverse voltage

Symbol

Rating

Unit

500 *

Average forward current

Surge current (10ms)

FSM

Junction temperature

125

°C

Storage temperature range

stg

−55 to 125

*: Mounted on a glass-epoxy circuit board of 20 mm× 20 mm,

pad dimensions of 4 mm× 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

USC

JEDEC

JEITA

―

TOSHIBA

1-1E1A

Weight: 4.5 mg (typ.)

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 10mA

Min

Typ.

Max

Unit

―

⎯

0.23

0.31

0.38

―

F (1)

F (2)

F (3)

Forward voltage

―

= 100mA

= 500mA

0.45

Reverse current

= 30V

μA

Total capacitance

= 0 V, f = 1 MHz

120

⎯

Marking

Equivalent Circuit (Top View)

2009-11-24

12 3 4

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