5秒后页面跳转
CURNM101-HF PDF预览

CURNM101-HF

更新时间: 2024-09-10 12:35:31
品牌 Logo 应用领域
上华 - COMCHIP 二极管快恢复二极管超快恢复二极管
页数 文件大小 规格书
4页 237K
描述
SMD Ultra Fast Recovery Rectifiers

CURNM101-HF 数据手册

 浏览型号CURNM101-HF的Datasheet PDF文件第2页浏览型号CURNM101-HF的Datasheet PDF文件第3页浏览型号CURNM101-HF的Datasheet PDF文件第4页 
SMD Ultra Fast Recovery Rectifiers  
CURNM101-HF Thru. CURNM105-HF  
Forward current: 1.0A  
Reverse voltage: 200 to 1000V  
RoHS Device  
Halogen Free  
1206-S/SOD-123  
0.138 (3.50)  
0.130 (3.30)  
Features  
- GPRC(Glass passivated rectifier chip) inside.  
0.075 (1.90)  
0.059 (1.50)  
R 0.016 (0.40)  
- Glass passivated cavity-free junction.  
- Low power loss, High efficiency.  
- High current capability  
- Plastic package has underwriters laboratory  
0.059(1.50)  
Typ.  
flammability classification 94V-0.  
0.035 (0.90)  
0.020 (0.50)  
0.035 (0.90)  
0.020 (0.50)  
Mechanical Data  
- Case: Packed with FRP substrate and  
epoxy underfilled.  
0.046 (1.16)  
0.030 (0.76)  
- Terminals: Pure Tin plated (Lead-Free), solderable  
per MIL-STD-750, method 2026.  
Dimensions in inches and (millimeter)  
Circuit diagram  
- Polarity: Cathode band laser marking.  
- Weight: 0.012 gram (approx).  
Absolute Maximum Ratings (at TA=25°C unless otherwise noted)  
CURNM CURNM CURNM CURNM CURNM  
101-HF 102-HF 103-HF 104-HF 105-HF  
Parameter  
Symbol  
VRRM  
IO  
Conditions  
Unit  
V
Repetitive peak reverse voltage  
200  
400  
600  
800  
1000  
1.0  
A
Average forward current  
Peak forward surge current  
Reverse recovery time  
8.3ms single half sine-wave  
IF=0.5A,IR=1.0A,Irr=0.25A  
IFSM  
15  
A
Trr  
50  
75  
nS  
Operating junction temperature  
range  
TJ  
-65 to +175  
-65 to +175  
°C  
°C  
Storage temperature range  
TSTG  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
Type  
Parameter  
Conditions  
MIN.  
TYP.  
MAX.  
Unit  
-
-
-
-
-
CURNM101-HF  
CURNM102-HF  
CURNM103-HF  
CURNM104-HF  
CURNM105-HF  
0.95  
1.10  
1.50  
1.50  
1.50  
1.00  
1.25  
1.70  
1.70  
1.70  
Forward voltage  
VF  
IF =1.0A  
V
-
-
-
-
Repetitive peak reverse current  
Junction capacitance  
IRRM  
CJ  
VR =Max. VRRM, TA=25°C  
VR=4V, f=1.0MHZ  
0.10  
9
5
-
uA  
pF  
-
-
Junction to ambient (Note)  
Junction to lead (Note)  
RθJA  
RθJL  
123  
45  
Thermal Resistance  
°C/W  
Notes: 1. Thermal resistance from junction to ambient and from junction to lead P.C.B. monuted on 0.2×0.2”(5.0*5.0mm) copper pad areas.  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:A  
Page 1  
QW-JU006  
Comchip Technology CO., LTD.  

与CURNM101-HF相关器件

型号 品牌 获取价格 描述 数据表
CURNM102-HF COMCHIP

获取价格

SMD Ultra Fast Recovery Rectifiers
CURNM103-HF COMCHIP

获取价格

SMD Ultra Fast Recovery Rectifiers
CURNM104-HF COMCHIP

获取价格

SMD Ultra Fast Recovery Rectifiers
CURNM105-HF COMCHIP

获取价格

SMD Ultra Fast Recovery Rectifiers
Current VECTRON

获取价格

Dual Frequency HPLL VCXO
CUS NIDEC

获取价格

LOW-PROFILE SLIDE SWITCHES
CUS01 TOSHIBA

获取价格

Portable eqiupment battery application
CUS01(TE85L) TOSHIBA

获取价格

Diode Schottky 30V 1A 2-Pin US-FLAT T/R
CUS01(TE85L,Q,M) TOSHIBA

获取价格

X35 PB-FREE, RECTIFIER; US-FLAT; MOQ=4000; P=0.06A; V=30V
CUS01(TE85R,C,X) TOSHIBA

获取价格

Rectifier Diode