CSD1306

更新时间： 2024-11-10 22:40:19

品牌	Logo	应用领域
CDIL		晶体晶体管局域网
页数	文件大小	规格书
3页	78K
描述
NPN SILICON PLANAR EPITAXIAL TRANSISTOR

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中文翻译

获取价格

数据手册

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CSD1306 数据手册

IS/ISO 9002

Lic# QSC/L-000019.3

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CSD1306 (SAW)

PIN CONFIGURATION (NPN)

1 = BASE

SOT-23

2 = EMITTER

Formed SMD Package

3 = COLLECTOR

Marking

CSD1306E=06

ABSOLUTE MAXIMUM RATINGS

VALUE

DESCRIPTION

SYMBOL

V_CBO

UNITS

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

V_CEO

V_EBO

I_C

700

Collector Current Continuous

Collector Current Peak

Power Dissipation @ T_a=25ºC

I_CP

P_D

200

Operating and Storage Junction

Temperature Range

T_j,T_stg

- 55 to +150

ºC

Electrical Characterstics (T_a=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

V_CBO

CONDITIONS

I_C=10mA, I_E=0

I_C=10mA, I_B=0

MIN

TYP

MAX

UNIT

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

Base Emitter On Voltage

V_CEO

V_EBO

I_CBO

I_E=1mA, I_C=0

V_CB=20V, I_E=0

V_EB=5V, I_C=0

1.0

I_EBO

V_{BE (on)}

V_CE=1V, I_C=150mA

I_C=500mA, I_B=50mA

V_CE=1V, I_C=150mA

Collector Emitter Saturation

Voltage

V_{CE (sat)}

0.5

DC Current Gain

h_FE

f_T

250

1200

V_CE=1V, I_C=150mA,

V_CB=10V, f=1MHz

Transition Frequency

Output Capacitance

Input Capacitance

250

MHz

C_ob

C_ib

V_EB=0.5V, I_C=0, f=1MHz

100

h_FEClassification

D : 250 - 500

E : 300 - 800

F : 600 -1200

CSD1306ERev_3 300103E

Data Sheet

Page 1 of 3

Continental Device India Limited

12 3

中文翻译

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