Datasheet > CSA916MA

CSA916MA

更新时间： 2024-09-19 23:43:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	44K
描述
TRANSISTOR \| BJT \| PNP \| 160V V(BR)CEO \| 50MA I(C) \| TO-237

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数据手册

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CSA916MA 数据手册

IS/ISO 9002

IS / IECQC 700000

Lic# QSC/L- 000019.2 IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CSA916

TO-237

BCE

Audio Frequency Amplifier Applications

Complementary CSC1941

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

Tj, Tstg

VALUE

160

5.0

100

1.0

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current DC

Collector Current Peak *

Collector Power Dissipation

Operating And Storage Junction

Temperature Range

-55 to +150

deg C

*PW=10ms, duty cycle=50%

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

ICBO

IEBO

TEST CONDITION

VCB=160V, IE=0

VEB=5V, IC=0

MIN

650

TYP

MAX

100

400

750

0.60

1.0

UNIT

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

hFE(1) **

IC=1mA,VCE=10V

hFE(2) ** IC=10mA,VCE=10V

VBE(on) ** IC=10mA,VCE=10V

VCE(Sat) ** IC=20mA,IB=2mA

VBE(Sat) ** IC=20mA,IB=2mA

Base Emitter On Voltage

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Dynamic Characteristics

Transition Frequency

Collector Output Capacitance

Cob

VCE=10V,IC=10mA,

VCB=10V, IE=0

f=1MHz

MHz

3.5

hFE (2) CLASSIFICATION

MA : 90-180LA : 135-270

KA : 200-400

** PW=350us, Duty Cycle=2% Pulsed

Continental Device India Limited

Page 1 of 2

Data Sheet

中文翻译

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