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CSA966O PDF预览

CSA966O

更新时间: 2024-11-07 23:43:59
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其他 - ETC /
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3页 66K
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BJT

CSA966O 数据手册

 浏览型号CSA966O的Datasheet PDF文件第2页浏览型号CSA966O的Datasheet PDF文件第3页 
IS/ISO 9002  
Lic# QSC/L- 000019.2  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
PNP SILICON PLANAR EPITAXIAL TRANSISTOR  
CSA966  
TO-92  
Plastic Package  
Complementary CSC2236  
Audio Power Amplifier Applications  
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
VALUE  
UNIT  
VCEO  
VCBO  
VEBO  
IC  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Collector Current  
30  
V
V
30  
5
1.5  
V
A
IE  
Emitter Current  
1.5  
A
PC  
Collector Power Dissipation  
Operating And Storage Junction  
Temperature Range  
900  
mW  
ºC  
Tj, Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL TEST CONDITION  
min  
typ  
max  
UNIT  
ICBO  
IEBO  
VCB=30V, IE = 0  
VEB=5V, IC = 0  
IC=10mA, IB=0  
IE=1mA, IC=0  
Collector Cut off Current  
Emitter Cut off Current  
Collector Emitter Voltage  
Emitter Base Voltage  
DC Current Gain  
-
-
100  
100  
-
nA  
nA  
V
BVCEO  
VEBO  
hFE*  
30  
5
-
V
VCE=2V, IC=500mA  
IC=1.5A, IB=0.03A  
100  
-
320  
2.0  
VCE(sat)  
Collector Emitter Saturation  
Voltage  
V
V
VBE  
VCE=2V, IC=500mA  
Base Emitter Voltage  
-
1.0  
DYNAMIC CHARACTERISTICS  
Transition Frequency  
fT  
IC=500mA, VCE=2V  
-
-
120  
-
MHz  
Cob  
IE=0,VCB=10V,f=1MHz  
Collector Output Capacitance  
30  
pF  
Classification  
hFE*  
O
Y
100 - 200  
160 - 320  
Continental Device India Limited  
Data Sheet  
Page 1 of 3  

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