Datasheet > CSA931O

CSA931O

更新时间： 2024-09-19 23:43:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	44K
描述
TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| TO-237

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数据手册

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CSA931O 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS

CSA931 (PNP)

CSC2331 (NPN)

TO-237

BCE

Low Frequency Amplifier And Medium Speed Switching

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current

8.0

700

1.0

Power Dissipation

Operating And Storage Junction

Temperature Range

Tj, Tstg

-55 to +150

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

8.0

TYP

MAX

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

VCBO

VCEO

VEBO

ICBO

IEBO

hFE*

IC=100uA, IE=0

IC=10mA, IB=0

IE=100uA, IC=0

VCB=60V, IE=0

VEB=5V, IC=0

100

240

0.7

1.2

IC=50mA,VCE=2V

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

VCE(Sat) * IC=500mA,IB=50mA

VBE(Sat) * IC=500mA,IB=50mA

Dynamic Characteristics

Collector Output Capacitance

Cob PNP VCB=10V, IE=0

NPN f=1MHz

8.0

Transition Frequency

PNP VCE=10V,IC=50mA,

NPN

100

MHz

CLASSIFICATION

hFE *

40-80

70-140

120-240

*Pulse Test : Pulse Width =350us, Duty Cycle=2%

Continental Device India Limited

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Data Sheet

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