Datasheet > CSA537C

CSA537C

更新时间： 2024-09-19 23:43:59

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4页	191K
描述
BJT

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中文翻译

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数据手册

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CSA537C 数据手册

IS/ISO 9002

Lic# QSC/L-000019.3

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

CSA537

TO-39

Metal Can Package

MEDIUM SPEED SWITCHING AND LINEAR AMPLIFIER APPLICATIONS

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

VALUE

DESCRIPTION

SYMBOL

V_CEO

V_CBO

V_EBO

I_C

UNITS

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current Continuous

Emitter Current Contiuuous

Power Dissipation

0.7

I_E

0.7

P_D

0.75

ºC

T_j

200

Junction Temperature

Storage Temperature

T_stg

-55 To +200

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

VALUE

>60

DESCRIPTION

SYMBOL TEST CONDITION

UNITS

B_VCBO

I_C=10mA, I_E= 0

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

B_VCEO

BV_EBO

I_CBO

I_C=5mA, I_E=0

>50

I_E=10mA, I_C=0

V_CB=30V, I_E=0

<50

I_EBO

V_EB=3V, I_C=0

<50

V_CE(Sat)

V_BE(Sat)

h_{FE (1)}

h_{FE (2)}

| h_fe|

I_C=150mA,I_B=15mA

I_C=50mA,V_CE=4V

<0.5

<1.1

50-160

>20

Collector Emitter(Sat) Voltage

Base Emitter (Sat) Voltage

DC Current Gain

I_C=400mA,V_CE=4V

I_C=20mA, V_CE=10V,

f=100MHz

>1.0

Small Signal Current Gain

Output Capacitance

C_ob

V_CB=10V, I_E=0, f=1MHz

<35

Continental Device India Limited

Data Sheet

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