Datasheet > CSA539R

CSA539R

更新时间： 2024-11-07 23:43:59

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
3页	66K
描述
BJT

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中文翻译

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数据手册

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CSA539R 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP SILICON PLANAR EPITAXIAL TRANSISTOR

CSA539

TO-92

Plastic Package

Complementary CSC815

Low Frequency Amplifier

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC )

DESCRIPTION

SYMBOL

VALUE

UNIT

V_CBO

V_CEO

V_EBO

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

I_C

T_j, T_stg

200

ºC

Collector Dissipation

Operating And Storage Junction

Temperature Range

400

-55 to +150

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

V_CBO

V_CEO

V_EBO

I_CBO

I_EBO

h_FE

I_C=100µA, I_E=0

I_C=10mA, I_B=0

I_E=10µA, I_C=0

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

V_CB=45V, I_E= 0

V_EB=3V, I_C= 0

V_CE=1V, I_C=50mA

100

240

0.90

0.5

0.60

V_BE(on) V_CE=1V, I_C=10mA

Base Emitter on Voltage

V_CE(sat)

I_C=150mA, I_B=15mA

Collector Emitter Saturation

Voltage

V_BE(sat)

I_C=150mA, I_B=15mA

Base Emitter Saturation Voltage

1.2

Classification

h_FE

40 - 80

70 - 140

120 - 240

Continental Device India Limited

Data Sheet

Page 1 of 3

12 3

中文翻译

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