Datasheet > CRSS039N12N

CRSS039N12N

更新时间： 2024-11-18 17:01:47

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	2461K
描述
TO-263(或D2PAK)

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中文翻译

获取价格

数据手册

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CRSS039N12N 数据手册

CRST042N12N,CRSS039N12N

华润微电子(重庆)有限公司

SkyMOS3 N-MOSFET 120V, 3.5mΩ, 160A

Features

Product Summary

V_DS

120V

• Uses CRM(CQ) advanced SkyMOS3 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_DS(on)

I_D

3.5mΩ

160A

100% Avalanche Tested

100% DVDS Tested

Applications

• Motor control and drive

• Battery management

• UPS (Uninterrupible Power Supplies)

CRST042N12N

CRSS039N12N

Package Marking and Ordering Information

Part #

Marking

Package

TO-220

TO-263

Reel Size

Tape Width

N/A

Qty

Packing

Tube

CRST042N12N

CRSS039N12N

CRST042N12N

CRSS039N12N

N/A

50pcs

Tape

N/A

1000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

120

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

197

160

125

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_{AS(Note 1)}

V_GS

640

473

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)^[1]

Gate-Source voltage

±20

Power dissipation (T_C= 25°C)

P_tot

337

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

※. Notes:1.EAS is FT Monitoring tested at starting Tj = 25℃, L = 0.5mH, IAS = 43.5A, Vgs=10V.

Rev1.0

©China Resources Microelectronics (Chongqing) Limited

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中文翻译

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