CRST038N08N3,CRSS037N08N3
华润微电子(重庆)有限公司
SkyMOS3 N-MOSFET 80V, 3.2mΩ, 120A
Features
Product Summary
VDS
80V
• Uses CRM(CQ) advanced SkyMOS3 technology
• Extremely low on-resistance RDS(on)
• Excellent QgxRDS(on) product(FOM)
• Qualified according to JEDEC criteria
RDS(on).typ
ID
3.2mΩ
120A
100% DVDS Tested
100% Avalanche Tested
Applications
• Motor control and drive
• Battery management System
• UPS (Uninterrupible Power Supplies)
CRST038N08N3
CRSS037N08N3
Package Marking and Ordering Information
Part #
Marking
Package
TO-220
TO-263
Packing
Tube
Reel Size Tape Width
Qty
50pcs
CRST038N08N3 CRST038N08N3
CRSS037N08N3 CRSS037N08N3
N/A
N/A
N/A
N/A
Tape
800/1000pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VDS
Drain-source voltage
80
V
Continuous drain current
TC = 25°C (Silicon limit)
TC = 25°C (Package limit)
TC = 100°C (Silicon limit)
160
120
ID
A
100
Pulsed drain current (TC = 25°C, tp limited by Tjmax
Avalanche energy, single pulse (ID = 53A, Rg=25Ω)[1]
)
ID pulse
EAS
480
A
mJ
V
712
VGS
Gate-Source voltage
±20
Power dissipation (TC = 25°C)
Ptot
169
W
°C
Tj , T stg
Operating junction and storage temperature
-55...+150
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
Tsold
260
°C
※. Notes:
1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS =53A, VGS = 10V.
Rev 1.0
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