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CNA1011

更新时间: 2024-09-17 19:56:27
品牌 Logo 应用领域
松下 - PANASONIC 输出元件光电
页数 文件大小 规格书
2页 50K
描述
Transistor Output Slotted Switch, 1-Channel, 5mm Slot Width

CNA1011 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.76Coll-Emtr Bkdn Voltage-Min:30 V
配置:SINGLE最大暗电源:200 nA
最大正向电流:0.05 A间隙大小:5 mm
安装特点:THROUGH HOLE MOUNT功能数量:1
最大通态电压:30 V标称通态集电极电流:0.3 mA
最高工作温度:85 °C最低工作温度:-25 °C
光电设备类型:TRANSISTOR OUTPUT SLOTTED SWITCH输出电路类型:Transistor
标称槽宽:5 mm表面贴装:NO
Base Number Matches:1

CNA1011 数据手册

 浏览型号CNA1011的Datasheet PDF文件第2页 
Transmissive Photosensors (Photo Interrupters)  
CNA1011  
Photo Interrupter  
Unit : mm  
Mark for indicating  
LED side ø1.5  
For contactless SW, object detection  
Overview  
CNA1011 is a small size photocoupler package consisting of a  
high efficiency GaAs infrared light emitting diode used as the light  
emitting element, and a high sensitivity phototransistor used as the  
light detecting element.  
Device  
center  
13.6  
19.2  
7.0±0.2  
13.0±0.15  
0.45±0.15  
5.0±0.2  
A
0.4  
Features  
Highly precise position detection : 0.3 mm  
2-ø3.2±0.2  
A'  
(2.54)  
4- 0.45  
2-2.0  
(10.1)  
SEC. A-A'  
Wide gap between emitting and detecting elements, suitable for  
thick plate detection  
2
1
3
2
1
3
4
Fast response : tr, tf = 6 µs (typ.)  
4
Small output current variation against change in temperature  
Pin connection  
(Note) ( ) Dimension is reference  
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Symbol Ratings Unit  
Reverse voltage (DC)  
Forward current (DC)  
Power dissipation  
Collector current  
VR  
IF  
3
50  
75  
20  
30  
5
V
mA  
mW  
mA  
V
Input (Light  
emitting diode)  
*1  
PD  
IC  
Collector to emitter voltage VCEO  
Emitter to collector voltage VECO  
Output (Photo  
transistor)  
V
*1 Input power derating ratio is  
*2  
Collector power dissipation PC  
100  
mW  
1.0 mW/˚C at Ta 25˚C.  
Operating ambient temperature  
Storage temperature  
Topr –25 to +85 ˚C  
Tstg –30 to +100 ˚C  
*2 Output power derating ratio is  
Temperature  
1.33 mW/˚C at Ta 25˚C.  
Electrical Characteristics (Ta = 25˚C)  
Parameter  
Symbol  
Conditions  
VF IF = 50mA  
IR VR = 3V  
min  
typ  
max Unit  
Forward voltage (DC)  
Reverse current (DC)  
Capacitance between terminals  
Collector cutoff current  
Collector to emitter capacitance  
Collector current  
1.2  
1.5  
10  
V
Input  
characteristics  
µA  
pF  
nA  
pF  
Ct VR = 0V, f = 1MHz  
ICEO VCE = 10V  
50  
5
200  
0.5  
Output  
characteristics  
CC VCE = 10V, f = 1MHz  
IC  
VCE = 10V, IF = 20mA, RL = 100  
0.3  
mA  
µs  
V
Transfer  
Response time  
tr , tf* VCC = 10V, IC = 1mA, RL = 100Ω  
6
characteristics  
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA  
* Switching time measurement circuit  
Sig.IN  
VCC  
td : Delay time  
(Input pulse)  
tr : Rise time (Time required for the collector current to increase  
from 10% to 90% of its final value)  
90%  
10%  
Sig.OUT  
(Output pulse)  
td  
tf : Fall time (Time required for the collector current to decrease  
from 90% to 10% of its initial value)  
50  
RL  
tr  
tf  
1

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