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CNA1012

更新时间: 2024-09-17 21:07:35
品牌 Logo 应用领域
松下 - PANASONIC 输出元件光电
页数 文件大小 规格书
2页 49K
描述
Transistor Output Slotted Switch, 1-Channel, 5mm Slot Width

CNA1012 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.77Coll-Emtr Bkdn Voltage-Min:30 V
配置:SINGLE最大暗电源:200 nA
最大正向电流:0.05 A间隙大小:5 mm
安装特点:THROUGH HOLE MOUNT功能数量:1
最大通态电压:30 V标称通态集电极电流:0.7 mA
最高工作温度:85 °C最低工作温度:-25 °C
光电设备类型:TRANSISTOR OUTPUT SLOTTED SWITCH输出电路类型:Transistor
标称槽宽:5 mm表面贴装:NO
Base Number Matches:1

CNA1012 数据手册

 浏览型号CNA1012的Datasheet PDF文件第2页 
Transmissive Photosensors (Photo Interrupters)  
CNA1012  
Photo Interrupter  
Unit : mm  
0.45±0.1  
For contactless SW, object detection  
Overview  
Mark for indicating  
CNA1012 is a photocoupler in which a high efficiency GaAs  
infrared light emitting diode is used as the light emitting element,  
and a high sensitivity phototransistor is used as the light detecting  
element. The two elements are arranged so as to face each other,  
and objects passing between them are detected.  
LED side  
13.0±0.3  
5.0±0.2  
A
0.45±0.1  
Device  
center  
A'  
2-0.45±0.2  
(2.54)  
Features  
(10.0)  
Highly precise position detection : 0.3 mm  
SEC. A-A'  
3
2
1
Wide gap between emitting and detecting elements, suitable for  
thick plate detection  
2
1
3
4
Fast response : tr, tf = 6 µs (typ.)  
4
Small output current variation against change in temperature  
Large output current  
Pin connection  
(Note) ( ) Dimension is reference  
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Symbol Ratings Unit  
Reverse voltage (DC)  
Forward current (DC)  
Power dissipation  
Collector current  
VR  
IF  
3
50  
75  
20  
30  
5
V
mA  
mW  
mA  
V
Input (Light  
emitting diode)  
*1  
PD  
IC  
Collector to emitter voltage VCEO  
Emitter to collector voltage VECO  
Output (Photo  
transistor)  
V
*1 Input power derating ratio is  
*2  
Collector power dissipation PC  
100  
mW  
1.0 mW/˚C at Ta 25˚C.  
*2 Output power derating ratio is  
Operating ambient temperature  
Storage temperature  
Topr –25 to +85 ˚C  
Tstg –30 to +100 ˚C  
Temperature  
1.33 mW/˚C at Ta 25˚C.  
Electrical Characteristics (Ta = 25˚C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max Unit  
Forward voltage (DC)  
Reverse current (DC)  
Collector cutoff current  
Collector to emitter capacitance  
Collector current  
VF IF = 50mA  
1.2  
1.5  
10  
V
Input  
characteristics  
IR VR = 3V  
µA  
nA  
pF  
mA  
µs  
ICEO VCE = 10V  
200  
Output  
characteristics  
CC VCE = 10V, f = 1MHz  
IC VCE = 10V, IF = 20mA  
tr , tf* VCC = 10V, IC = 1mA, RL = 100  
5
6
0.7  
Transfer  
Response time  
characteristics  
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA  
0.3  
V
* Switching time measurement circuit  
Sig.IN  
VCC  
td : Delay time  
(Input pulse)  
tr : Rise time (Time required for the collector current to increase  
from 10% to 90% of its final value)  
90%  
10%  
Sig.OUT  
(Output pulse)  
td  
tf : Fall time (Time required for the collector current to decrease  
from 90% to 10% of its initial value)  
50  
RL  
tr  
tf  
1

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